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参数资料
| 型号： | 2SK3386-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 235K |
| 代理商： | 2SK3386-Z |
Data Sheet D14471EJ4V0DS
2
2SK3386
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 17 A
10
19
S
RDS(on)1
VGS = 10 V, ID = 17 A
17
21
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.0 V, ID = 17 A
25
36
m
Ω
Input Capacitance
Ciss
VDS = 10 V
2100
pF
Output Capacitance
Coss
VGS = 0 V
340
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
170
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 17 A
32
ns
Rise Time
tr
VGS = 10 V
310
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
98
ns
Fall Time
tf
100
ns
Total Gate Charge
QG
VDD = 48 V
39
nC
Gate to Source Charge
QGS
VGS = 10 V
7.0
nC
Gate to Drain Charge
QGD
ID = 34 A
12
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 34 A, VGS = 0 V
0.87
V
Reverse Recovery Time
trr
IF = 34 A, VGS = 0 V
46
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
84
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
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|---|---|
| 2SK3386-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 34A 21m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252 |
| 2SK3386-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3387 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
| 2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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