参数资料
型号: 2SK3386-Z
元件分类: 小信号晶体管
英文描述: 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: TO-252, MP-3Z, 3 PIN
文件页数: 6/10页
文件大小: 235K
代理商: 2SK3386-Z
Data Sheet D14471EJ4V0DS
3
2SK3386
TYPICAL CHARACTERISTICS (TA = 25°C )
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 3.13C/W
μ
Rth(ch-A) = 125C/W
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
50
70
60
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
ID(pulse)
RDS(on)
Limited
(at
V
GS
= 10
V
)
ID(DC)
PW
=
10
μs
100
μs
1 ms
0.1
DC
Po
wer
Dissipation
Limited
10
ms
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