参数资料
型号: 2SK3386-Z
元件分类: 小信号晶体管
英文描述: 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: TO-252, MP-3Z, 3 PIN
文件页数: 8/10页
文件大小: 235K
代理商: 2SK3386-Z
Data Sheet D14471EJ4V0DS
5
2SK3386
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1.0
10
100
1000
100
μ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
15
520
25
30
35
40
20
40
60
80
4
8
12
16
ID = 34 A
VDS
VGS
30 V
12 V
VDD = 48 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
10
20
30
50
0
50
100
150
ID = 17 A
40
50
60
10 V
VGS = 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
VGS = 0 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
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