型号: | 2SK3386-Z |
元件分类: | 小信号晶体管 |
英文描述: | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
封装: | TO-252, MP-3Z, 3 PIN |
文件页数: | 8/10页 |
文件大小: | 235K |
代理商: | 2SK3386-Z |
相关PDF资料 |
PDF描述 |
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2SK3389 | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
2SK338 | 5 A, 400 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
2SK3390 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
2SK3391JXTL-E | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
2SK3391 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
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2SK3386-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 34A 21m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252 |
2SK3386-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
2SK3387 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
2SK3387_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |