参数资料
型号: 2SK3386-Z
元件分类: 小信号晶体管
英文描述: 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: TO-252, MP-3Z, 3 PIN
文件页数: 7/10页
文件大小: 235K
代理商: 2SK3386-Z
Data Sheet D14471EJ4V0DS
4
2SK3386
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2.0
3.0
4.0
40
100
80
60
1.0
Pulsed
VGS =10 V
20
4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
0
510
15
20
Pulsed
50
40
30
20
10
ID = 17 A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
12
34
5
6
VDS = 10 V
1
0.1
0.01
10
100
TA =
55C
25C
75C
150C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
10
1
100
1000
Pulsed
0
10
20
30
40
50
60
70
80
VGS = 4.0 V
10 V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(th)
-
Gate
to
Source
Threshold
Voltage
-
V
0.5
VDS = 10 V
ID = 1 mA
1.0
1.5
2.0
2.5
3.0
50
0
50
100
150
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
TA = 150C
75C
25C
50C
VDS = 10 V
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