参数资料
型号: 2SK3482-AZ
厂商: Renesas Electronics America
文件页数: 6/10页
文件大小: 0K
描述: MOSFET N-CH 100V MP-3/TO-251
标准包装: 500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 36A
开态Rds(最大)@ Id, Vgs @ 25° C: 33 毫欧 @ 18A,10V
闸电荷(Qg) @ Vgs: 72nC @ 10V
输入电容 (Ciss) @ Vds: 3600pF @ 10V
功率 - 最大: 1W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: TO-251(MP-3)
包装: 散装
2SK3482
90
80
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
100
FORWARD TRANSFER CHARACTERISTICS
70
V GS = 10 V
10
60
50
4.5 V
1
T A = 150°C
75°C
-25°C
-40°C
40
30
20
10
0
0.1
0.01
V DS = 10 V
Pulsed
0
1
2
3
4
5
0
1
2
3
4
5
4.0
V DS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.5
3.0
2.5
V SD = 10 V
I D = 1mA
10
T A = 15 0 °C
7 5°C
2.0
1
2 5 °C
-4 0 ° C
1.5
1.0
0.5
0.0
0 .1
0 .0 1
V DS = 10V
P u ls e d
-50
-25
0
25
50
75
100 125 150
0 .0 1
0 .1
1
10
100
70
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
60
50
40
30
20
V G S = 4 .5 V
10 V
P u ls e d
45
40
35
30
25
20
15
7.2 A
I D = 36 A
18 A
Pulsed
10
10
0
5
0
0 .1
1
10
100
0
2
4
6
8
10
12
14
16
18
20
4
I D - Drain Current - A
Data Sheet D15064EJ3V0DS
V GS - Gate to Source Voltage - V
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