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参数资料
| 型号： | 5962R9684502VXA |
| 元件分类： | SRAM |
| 英文描述： | 4K X 9 DUAL-PORT SRAM, 45 ns, PGA68 |
| 封装： | PGA-68 |
| 文件页数： | 18/21页 |
| 文件大小： | 496K |
| 代理商： | 5962R9684502VXA |
6
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
Notes:
* Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. VIH = 5.5V, V IL = 0V.
5. IDD (OP) derates at 6.4mA/MHz.
6. IDD (OP) derates at 3.4mA/MHz.
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
VIH
High-level input voltage
(CMOS)
0.7VDD
V
VIL
Low-level input voltage
(CMOS)
0.3VDD
V
OL
Low-level output voltage
I
OL = 8mA, V DD = 4.5V (TTL)
0.4
V
VOL
Low-level output voltage
IOL = 200A, VDD = 4.5V (CMOS)
0.05
V
VOH
High-level output voltage
IOH = -4mA, VDD = 4.5V (TTL)
2.4
V
OH
High-level output voltage
I
OH = -200A, VDD = 4.5V (CMOS)
4.45
V
C
IN
1
Input capacitance
= 1MHz @ 0V
25
pF
CIO
1
Bidirectional I/O capacitance
= 1MHz @ 0V
25
pF
I
IN
Input leakage current
V
IN = V DD and VSS
-10
10
A
IOZ
Three-state output leakage current
VO = VDD and VSS
VDD = 5.5V
G = 5.5V
-10
10
A
I
OS
2,3
Short-circuit output current
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
-90
90
mA
IDD(OP)
4,5 Supply current operating (both ports)
@ 22.2MHz
CMOS inputs (I
OUT = 0)
V
DD = 5.5V
300
mA
IDD(OP)
4,6 Supply current operating (single port)
@ 22.2 MHz
CMOS inputs (I
OUT = 0)
V
DD = 5.5V
150
mA
IDD(OP)
4,5 Supply current operating (both ports)
@ 18.2MHz
CMOS inputs (I
OUT = 0)
V
DD = 5.5V
275
mA
IDD(OP)
4,6 Supply current operating (single port)
@ 18.2 MHz
CMOS inputs (I
OUT = 0)
VDD = 5.5V
138
mA
IDD(SB)
4
Supply current standby
CMOS inputs (IOUT = 0)
CE = VDD - 0.5, VDD = 5.5V
1
mA
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