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参数资料
| 型号： | 72225LB25TFG |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | FIFO |
| 英文描述： | 1K X 18 OTHER FIFO, 15 ns, PQFP64 |
| 封装： | GREEN, PLASTIC, STQFP-64 |
| 文件页数： | 4/16页 |
| 文件大小： | 178K |
| 代理商： | 72225LB25TFG |
12
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
COMMERCIALANDINDUSTRIAL
TEMPERATURERANGES
OCTOBER 22, 2008
Figure 12. Programmable Almost-Empty Flag Timing
Figure 13. Programmable Almost-Full Flag Timing
WCLK
tCLKH
tCLKL
tENS
tENH
tENS
tPAE
n + 1 words in FIFO
n words in FIFO
RCLK
tPAE
2766 drw 14
WCLK
tCLKH
tCLKL
tENS
tENH
tENS
tPAF
D – m + 1 words
in FIFO memory
RCLK
tPAF
(1)
2766 drw 15
D – m words
in FIFO memory
(2)
(1)
D – m + 1 words in FIFO memory (1)
Figure 14. Half-Full Flag Timing
WCLK
tENS
tENH
tENS
tHF
RCLK
tHF
D/2 words in
FIFO memory(1)
2766 drw 16
D/2 + 1 words in
FIFO memory(2)
D/2 words in FIFO memory
(1)
tCLKL
tCLKH
NOTES:
1. D = maximum FIFO Depth = 256 words for the IDT72205LB, 512 words for the IDT72215LB, 1,024 words for the IDT72225LB, 2,048 words for the IDT72235LB and 4,096 words
for the IDT72245LB.
NOTE:
1. n =
PAE offset. Number of data words written into FIFO already = n.
NOTES:
1. m =
PAF offset. D = maximum FIFO Depth. Number od data words written into FIFO memory = 256 - m + 1 for the IDT72205LB, 512 - m + 1 for the IDT72215LB,
1,024 - m + 1 for the IDT72225LB, 2,048 - m + 1 for the IDT72235LB and 4,096 - m + 1 for the IDT72245LB.
2. 256 - m words for the IDT72205LB, 512 - m words for the IDT72215LB, 1,024 - m words for the IDT72225LB, 2,048 - m words for the IDT72235LB and 4,096 - m words for
the IDT72245LB.
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