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| 型号： | A28F400BX-B |
| 英文描述： | 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256K x16。为512k × 8）启动块闪存系列 |
| 文件页数： | 14/36页 |
| 文件大小： | 457K |
| 代理商： | A28F400BX-B |
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A28F400BR-T/B
E
14
ADVANCE INFORMATION
Table 6. Command Bus Definitions
Notes
First Bus Cycle
Second Bus Cycle
Command
8
Oper
Addr
Data
Oper
Addr
Data
Read Array
1
Write
X
FFH
Intelligent Identifier
2,4
Write
X
90H
Read
IA
IID
Read Status Register
3
Write
X
70H
Read
X
SRD
Clear Status Register
Write
X
50H
Word/Byte Program
6,7
Write
PA
40H
Write
PA
PD
Alternate Word/Byte
Program
6,7
Write
PA
10H
Write
PA
PD
Block Erase/Confirm
5
Write
BA
20H
Write
BA
D0H
Erase Suspend/Resume
Write
X
B0H
Write
X
D0H
ADDRESS
BA = Block Address
IA = Identifier Address
PA = Program Address
X= Don’t Care
DATA
SRD = Status Register Data
IID = Identifier Data
PD = Program Data
NOTES:
1.
Bus operations are defined in Tables 2 and 3.
2.
IA = Identifier Address: A
0
= 0 for manufacturer code, A
0
= 1 for device code.
3.
SRD = Data read from Status Register.
4.
IID = Intelligent Identifier Data. Following the Intelligent Identifier command, two read operations access manufacturer and
device codes.
5.
BA = Address within the block being erased.
6.
PA = Address to be programmed. PD = Data to be programmed at location WD.
7.
Either 40H or 10H commands is valid.
8.
When writing commands to the device, the upper data bus [DQ
8
–DQ
15
] = X (28F400 only) which is either V
CC
or V
SS
, to
minimize current draw.
Program Setup (40H or 10H)
This command simply sets the CUI into a state
such that the next write will load the Address and
Data registers. After this command is executed, the
outputs default to the Status Register. A
two Read
Array command sequence (FFH) is required to
reset to Read Array after the Program Setup
command.
Program
The second write after the Program Setup
command, will latch addresses and data. Also, the
CUI initiates the WSM to begin execution of the
program algorithm. The device outputs Status
Register data when OE# is enabled. A Read Array
command is required after programming, to read
array data.
Erase Setup (20H)
Prepares the CUI for the Erase Confirm command.
No other action is taken. If the next command is not
an Erase Confirm command, then the CUI will set
both the Program Status and Erase Status bits of
the Status Register to a
“1,” place the device into
the Read Status Register state, and wait for another
command.
相关PDF资料 |
PDF描述 |
|---|---|
| A28F400BR-TB | Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes |
| A28F400BX-T | 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A29-1 | 10 TO 1500 MHz CASCADABLE AMPLIFIER |
| A290011SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
| A29001SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F400BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F400BX-T/B |
| A28F5501S | 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
| A28F5502 | 制造商:General Electric Company 功能描述:Film Capacitor |
| A28F5502S | 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF 1KV 10% CASE 制造商:GE 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE; Capacitance:0.5F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:1000V; Life Time @ Temperature:40000 hours @ 70C; Capacitor Case Style:CAN 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
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