参数资料
型号: A28F400BX-B
英文描述: 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 4兆位(256K x16。为512k × 8)启动块闪存系列
文件页数: 26/36页
文件大小: 457K
代理商: A28F400BX-B
A28F400BR-T/B
E
26
ADVANCE INFORMATION
Table 10. DC Characteristics: Automotive Temperature Operation
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
V
IH
Input High Voltage
2.0
V
CC
±
0.5V
V
V
OL
Output Low Voltage (TTL)
0.45
V
V
CC
= V
CC
Min
V
PP
= 12V
I
OL
= 5.8 mA
V
CC
= V
CC
Min
I
OH
= –1.5 mA
V
CC
= V
CC
Min
I
OH
= –100 μA
V
OH
1
Output High Voltage (TTL)
2.4
V
V
OH
2
Output High Voltage (CMOS)
V
CC
0.4V
V
V
PPLK
V
PP
Lock-Out Voltage
3
0.0
1.5
V
Complete Write
Protection
V
PPH
1
V
PP
(Program/Erase
Operations)
4.5
5.5
V
V
PP
at 5V
V
PPH
2
V
PP
(Program/Erase
Operations)
11.4
12.6
V
V
PP
at 12V
V
LKO
V
CC
Program/Erase Lock
Voltage
2.0
V
V
HH
RP# Unlock Voltage
11.4
12.6
V
Boot Block
Program/Erase
V
PP
= 12V
Table 11. Capacitance (T
A
- 25°C, f = 1 MHz)
Symbol
Parameter
Note
Typ
Max
Unit
Conditions
C
IN
Input Capacitance
4
6
8
pF
V
IN
= 0V
C
OUT
Output Capacitance
4
10
12
pF
V
OUT
= 0V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, T = +25°C. These currents are valid for all
product versions (packages and speeds).
2. I
is specified with the device de-selected. If the devices is read while in erase suspend mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block erases and word/byte program operations
are
inhibited when V
PP
= V
PPLK
, and not guaranteed in the range between
V
PPH
1 and V
PPLK
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical, in static operation.
6. CMOS Inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
IL
or V
IH
.
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A28F400BR-TB Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
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