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参数资料
| 型号： | A28F400BX-B |
| 英文描述： | 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256K x16。为512k × 8）启动块闪存系列 |
| 文件页数： | 30/36页 |
| 文件大小： | 457K |
| 代理商： | A28F400BX-B |
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A28F400BR-T/B
E
30
ADVANCE INFORMATION
Table 13. AC Characteristics: WE#
–Controlled Write Operations
(1)
(Automotive Temperature)
Symbol
Parameter
Notes
Min
Max
Unit
t
AVAV
Write Cycle Time
80
ns
t
PHWL
RP# High Recovery to WE# Going Low
450
ns
t
ELWL
CE# Setup to WE# Going Low
0
ns
t
PHHWH
Boot Block Lock Setup to WE# Going High
6,8
100
ns
t
VPWH
V
PP
Setup to WE# Going High
5,8
100
ns
t
AVWH
Address Setup to WE# Going High
3
60
ns
t
DVWH
Data Setup to WE# Going High
4
60
ns
t
WLWH
WE# Pulse Width
60
ns
t
WHDX
Data Hold Time from WE# High
4
0
ns
t
WHAX
Address Hold Time from WE# High
3
0
ns
t
WHEH
CE# Hold Time from WE# High
10
ns
t
WHWL
WE# Pulse Width High
20
ns
t
WHQV1
Duration of Word/Byte Program Operation
2,5
7
μs
t
WHQV2
Duration of Erase Operation (Boot)
2,5,6
0.4
s
t
WHQV3
Duration of Erase Operation (Parameter)
2,5
0.4
s
t
WHQV4
Duration of Erase Operation (Main)
2,5
0.7
s
t
QWL
V
PP
Hold from Valid SRD
5,8
0
ns
t
QVPH
RP# V
HH
Hold from Valid SRD
6,8
0
ns
t
PHBR
Boot-Block Relock Delay
7,8
100
ns
NOTES:
1.
Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to
AC Characteristics during read mode.
The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled
internally which includes verify and margining operations.
Refer to command definition table for valid A
IN
.
Refer to command definition table for valid D
IN
.
Program/erase durations are measured to valid SRD data (successful operation, SR.7 =1)
For boot block program/erase, RP# should be held at V
HH
or WP# should be held at V
IH
until operation completes
successfully.
Time t
PHBR
is required for successful relocking of the boot block.
Sampled, but not 100% tested.
V
PP
at 5.0V.
10. V
PP
at 12.0V.
11. See 5V Standard Test Configuration.
2.
3.
4.
5.
6.
7.
8.
9.
相关PDF资料 |
PDF描述 |
|---|---|
| A28F400BR-TB | Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes |
| A28F400BX-T | 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A29-1 | 10 TO 1500 MHz CASCADABLE AMPLIFIER |
| A290011SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
| A29001SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F400BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F400BX-T/B |
| A28F5501S | 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
| A28F5502 | 制造商:General Electric Company 功能描述:Film Capacitor |
| A28F5502S | 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF 1KV 10% CASE 制造商:GE 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE; Capacitance:0.5F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:1000V; Life Time @ Temperature:40000 hours @ 70C; Capacitor Case Style:CAN 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
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