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| 型号： | A28F400BX-B |
| 英文描述： | 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256K x16。为512k × 8）启动块闪存系列 |
| 文件页数： | 32/36页 |
| 文件大小： | 457K |
| 代理商： | A28F400BX-B |
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A28F400BR-T/B
E
32
ADVANCE INFORMATION
Table 14. AC Characteristics: CE#
–Controlled Write Operations
(1,12)
Symbol
Parameter
Notes
Min
Max
Unit
t
AVAV
t
PHEL
t
WLEL
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHQV1
Write Cycle Time
80
ns
RP# High Recovery to CE# Going Low
450
ns
WE# Setup to CE# Going Low
0
ns
Boot Block Lock Setup to CE# Going High
6,8
100
ns
V
PP
Setup to CE# Going High
Address Setup to CE# Going High
5,8
100
ns
60
ns
Data Setup to CE# Going High
3
60
ns
CE# Pulse Width
4
60
ns
Data Hold Time from CE# High
0
ns
Address Hold Time from CE# High
4
10
ns
WE# Hold Time from CE# High
3
10
ns
CE# Pulse Width High
20
ns
Duration of Word/Byte Program Operation
2,5
7
μs
t
EHQV2
Duration of Erase Operation (Boot)
2,5,6
0.4
s
t
EHQV3
Duration of Erase Operation (Parameter)
2,5
0.4
s
t
EHQV4
Duration of Erase Operation (Main)
2,5
0.7
s
t
QWL
t
QVPH
t
PHBR
NOTES:
See WE# Controlled Write Operations for notes 1 through 11.
12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where CE#
defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should be
measured relative to the CE# waveform.
V
PP
Hold from Valid SRD
RP# V
HH
Hold from Valid SRD
Boot-Block Relock Delay
5,8
0
ns
6,8
0
ns
7,8
100
ns
相关PDF资料 |
PDF描述 |
|---|---|
| A28F400BR-TB | Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes |
| A28F400BX-T | 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A29-1 | 10 TO 1500 MHz CASCADABLE AMPLIFIER |
| A290011SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
| A29001SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F400BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F400BX-T/B |
| A28F5501S | 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
| A28F5502 | 制造商:General Electric Company 功能描述:Film Capacitor |
| A28F5502S | 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF 1KV 10% CASE 制造商:GE 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE; Capacitance:0.5F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:1000V; Life Time @ Temperature:40000 hours @ 70C; Capacitor Case Style:CAN 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
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