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参数资料
| 型号： | A28F400BX-B |
| 英文描述： | 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256K x16。为512k × 8）启动块闪存系列 |
| 文件页数： | 21/36页 |
| 文件大小： | 457K |
| 代理商： | A28F400BX-B |
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3.4.2
A28F400BR-T/B
21
ADVANCE INFORMATION
WP# = V
IL
FOR BOOT BLOCK
LOCKING
When WP# = V
IL
, the boot block is locked and any
program or erase operation will result in an error in
the Status Register. All other blocks remain
unlocked in this condition and can be programmed
or erased normally. Note that this feature is
overridden and the boot block unlocked when RP#
= V
HH
.
3.4.3
RP# = V
OR WP# = V
IH
FOR BOOT
BLOCK UNLOCKING
Two methods can be used to unlock the boot block:
1.
WP# = V
IH
2.
RP# = V
HH
If both or either of these two conditions are met, the
boot block will be unlocked and can be
programmed or erased. The Truth Table, Table 8,
clearly defines the write protection methods.
Table 8. Write Protection Truth Table for
SmartVoltage Boot Block Family
V
PP
RP#
WP#
Write Protection
Provided
V
IL
X
X
All Blocks Locked
≥
V
PPLK
V
IL
X
All Blocks Locked
(Reset)
≥
V
PPLK
V
HH
X
All Blocks Unlocked
≥
V
PPLK
V
IH
V
IL
Boot Block Locked
≥
V
PPLK
V
IH
V
IH
All Blocks Unlocked
3.5
Power Consumption
3.5.1
ACTIVE POWER
With CE# at a logic-low level and RP# at a logic-
high level, the device is placed in the active mode.
Refer to the DC Characteristics table for I
CC
current
values.
3.5.2
AUTOMATIC POWER SAVINGS (APS)
Automatic Power Savings (APS) is a low-power
feature during active mode of operation. The boot
block flash memory family incorporates Power
Reduction Control (PRC) circuitry which allows the
device to put itself into a low current state when it is
not being accessed. After data is read from the
memory array, PRC logic controls the device’s
power consumption by entering the APS mode
where typical I
CC
current is less than 1 mA. The
device stays in this static state with outputs valid
until a new location is read.
3.5.3
STANDBY POWER
With CE# at logic-high level (V
IH
), and the CUI in
read mode, the memory is placed in standby mode.
The standby operation disables much of the
device’s circuitry and substantially reduces device
power consumption. The outputs (DQ[0:15] or
DQ[0:7]) are placed in a high-impedance state
independent of the status of the OE# signal. When
CE# is at logic-high level during erase or program
functions, the devices will continue to perform the
erase or program function and consume erase or
program active power until erase or program is
completed.
3.5.4
DEEP POWER-DOWN MODE
The SmartVoltage boot block family supports a low
typical I
CC
in deep power-down mode. The device
has an RP# pin which places the device in the deep
power-down mode. When RP# is at a logic-low
(GND
±
0.2V), all circuits are turned off in order to
save power. (Note: BYTE# pin must be at CMOS
levels to achieve the most deep power-down
current savings.)
During read modes, the RP# pin going low de-
selects the memory and places the output drivers in
a high impedance state. Recovery from the deep
power-down state, requires a minimum access time
of t
PHQV
. (See the AC Characteristics table for
specification numbers.)
During erase or program modes, RP# low will abort
either erase or program operation. The contents of
the memory are no longer valid, as the data has
been corrupted by the RP# function. As in the read
mode above, all internal circuitry is turned off to
achieve the power savings.
RP# transitions to V
, or turning power off to the
device will clear the Status Register.
相关PDF资料 |
PDF描述 |
|---|---|
| A28F400BR-TB | Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes |
| A28F400BX-T | 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A29-1 | 10 TO 1500 MHz CASCADABLE AMPLIFIER |
| A290011SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
| A29001SERIES | 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F400BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F400BX-T/B |
| A28F5501S | 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
| A28F5502 | 制造商:General Electric Company 功能描述:Film Capacitor |
| A28F5502S | 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF 1KV 10% CASE 制造商:GE 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE; Capacitance:0.5F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:1000V; Life Time @ Temperature:40000 hours @ 70C; Capacitor Case Style:CAN 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
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