参数资料
型号: AD5315BRM
厂商: Analog Devices Inc
文件页数: 20/24页
文件大小: 0K
描述: IC DAC 10BIT 2WIRE I2C 10-MSOP
产品培训模块: Data Converter Fundamentals
DAC Architectures
标准包装: 50
设置时间: 6µs
位数: 10
数据接口: I²C,串行
转换器数目: 4
电压电源: 单电源
功率耗散(最大): 5mW
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-MSOP
包装: 管件
输出数目和类型: 4 电压,单极;4 电压,双极
采样率(每秒): 143k
AD5305/AD5315/AD5325
Rev. G | Page 5 of 24
AC CHARACTERISTICS
VDD = 2.5 V to 5.5 V, RL = 2 kΩ to GND, CL = 200 pF to GND, all specifications TMIN to TMAX, unless otherwise noted.
Table 2.
A, B Version1
Parameter2, 3
Min
Typ
Max
Unit
Conditions/Comments
Output Voltage Settling Time
VREF = VDD = 5 V
AD5305
6
8
μs
scale to scale change (0×40 to 0×C0)
AD5315
7
9
μs
scale to scale change (0×100 to 0×300)
AD5325
8
10
μs
scale to scale change (0×400 to 0×C00)
Slew Rate
0.7
V/μs
Major-Code Transition Glitch Energy
12
nV-s
1 LSB change around major carry
Digital Feedthrough
1
nV-s
Digital Crosstalk
1
nV-s
DAC-to-DAC Crosstalk
3
nV-s
Multiplying Bandwidth
200
kHz
VREF = 2 V ± 0.1 V p-p
Total Harmonic Distortion
70
dB
VREF = 2.5 V ± 0.1 V p-p, frequency = 10 kHz
1 Temperature range (A, B version): 40°C to +105°C; typical at +25°C.
2 Guaranteed by design and characterization, not production tested.
3 See the Terminology section.
TIMING CHARACTERISTICS
VDD = 2.5 V to 5.5 V, all specifications TMIN to TMAX, unless otherwise noted.
Table 3.
Parameter1, 2
Limit at TMIN, TMAX (A, B Version)
Unit
Conditions/Comments
fSCL
400
kHz max
SCL clock frequency
t1
2.5
μs min
SCL cycle time
t2
0.6
μs min
tHIGH, SCL high time
t3
1.3
μs min
tLOW, SCL low time
t4
0.6
μs min
tHD,STA, start/repeated start condition hold time
t5
100
ns min
tSU,DAT, data setup time
0.9
μs max
tHD,DAT, data hold time
0
μs min
tHD,DAT, data hold time
t7
0.6
μs min
tSU,STA, setup time for repeated start
t8
0.6
μs min
tSU,STO, stop condition setup time
t9
1.3
μs min
tBUF, bus-free time between a stop and a start condition
t10
300
ns max
tR, rise time of SCL and SDA when receiving
0
ns min
tR, rise time of SCL and SDA when receiving (CMOS compatible)
t11
250
ns max
tF, fall time of SDA when transmitting
0
ns min
tF, fall time of SDA when receiving (CMOS compatible)
300
ns max
tF, fall time of SCL and SDA when receiving
20 + 0.1 CB4
ns min
tF, fall time of SCL and SDA when transmitting
400
pF max
Capacitive load for each bus line
1 See Figure 2.
2 Guaranteed by design and characterization; not production tested.
3 A master device must provide a hold time of at least 300 ns for the SDA signal (referred to VIH min of the SCL signal) in order to bridge the undefined region of SCL’s
falling edge.
4 CB is the total capacitance of one bus line in pF. tR and tF measured between 0.3 VDD and 0.7 VDD.
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