参数资料
型号: ADP1821ARQZ-R7
厂商: Analog Devices Inc
文件页数: 19/24页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 16-QSOP
标准包装: 1
PWM 型: 电压模式
输出数: 1
频率 - 最大: 720kHz
占空比: 90%
电源电压: 3.7 V ~ 5.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
包装: 标准包装
产品目录页面: 791 (CN2011-ZH PDF)
其它名称: ADP1821ARQZ-R7DKR

ADP1821
PCB LAYOUT GUIDELINE
In any switching converter, there are some circuit paths that
carry high dI/dt, which can create spikes and noise. Other
circuit paths are sensitive to noise and still others carry high
dc current and can produce significant IR voltage drops. The
key to proper PCB layout of a switching converter is to identify
these critical paths and arrange the components and copper
area accordingly. When designing PCB layouts, be sure to keep
high current loops small. In addition, keep compensation and
feedback components away from the switch nodes and their
associated components.
The following is a list of recommended layout practices for
ADP1821, arranged in approximately decreasing order of
importance. A PCB layout example of the circuit shown in
Figure 23 is shown in Figure 20 and Figure 21.
? The current waveform in the top and bottom FETs is a pulse
with very high dI/dt, so the path to, through, and from each
individual FET should be as short as possible and the two
paths should be as similar as possible. In designs that use
a pair of D-Paks or SO-8 FETs on one side of the PCB, it is
best to counter-rotate the two so that the switch node is on
one side of the pair and the high side drain can be bypassed
to the low side source with a suitable ceramic bypass capacitor,
placed as close as possible to the FETs to minimize inductance
around this loop through the FETs and capacitor. The recom-
mended bypass ceramic capacitor values range from 1 μF to
22 μF depending upon the output current. This bypass
capacitor is usually connected to a larger value bulk filter
capacitor and should be grounded to the PGND plane.
?
?
?
Avoid long traces or large copper areas at the FB and CSL
pins, which are low signal level inputs that are sensitive to
capacitive and inductive noise pickup. It is best to position
any series resistors and capacitors as closely as possible to
these pins. Avoid running these traces close and parallel to
high dI/dt traces.
The switch node is the noisiest place in the switcher circuit
with large ac and dc voltage and current. This node should
be wide to minimize resistive voltage drop. But to minimize
the generation of capacitively coupled noise, the total area
should be small. Place the FETs and inductor close together
on a small copper plane in order to minimize series
resistance and keep the copper area small.
Gate drive traces (DH and DL) handle high dI/dt and
tend to produce noise and ringing. They should be as
short and direct as possible. If possible, avoid using feed-
through vias in the gate drive traces. If vias are needed, it
is best to use two relatively large ones in parallel to reduce
the peak current density and the current in each via. If the
overall PCB layout is less than optimal, slowing down the
gate drive slightly can be very helpful to reduce noise and
ringing. It is occasionally helpful to place small value resistors
(such as 5 Ω or 10 Ω) in series with the gate leads, mainly
DH traces to the high side FET gates. These can be popu-
lated with 0 Ω resistors if resistance is not needed. Note that
the added gate resistance increases the switching rise and
fall times, and that also increases the switching power loss
in the MOSFET.
?
?
GND, VCC bypass, soft start capacitor, and the bottom end
of the output feedback divider resistors should be tied to an
almost isolated, small AGND plane. All of these connections to
the AGND plane should be kept as short as possible. No
high current or high dI/dt signals should be connected to
this AGND plane. The AGND area should be connected
through one wide trace to the negative terminal of the
output filter capacitors.
The PGND pin handles high dI/dt gate drive current
returning from the source of the low side MOSFET. The
voltage at this pin also establishes the 0 V reference for the
overcurrent limit protection (OCP) function and the CSL
pin. A small PGND plane should connect the PGND pin
and the PVCC bypass capacitor through a wide and direct
path to the source of the low side MOSFET. The placement
of C IN is critical for controlling ground bounce. The negative
terminal of C IN needs to be placed very close to the source of
?
?
The negative terminal of output filter capacitors should be
tied closely to the source of the low side FET. Doing this
helps to minimize voltage difference between GND and
PGND at the ADP1821.
Generally, be sure that all traces are sized according to the
current being handled as well as their sensitivity in the
circuit. Standard PCB layout guidelines mainly address
heating effects of current in a copper conductor. Although
these are completely valid, they do not fully cover other
concerns, such as stray inductance or dc voltage drop. Any
dc voltage differential in connections between ADP1821
GND and the converter power output ground can cause a
significant output voltage error, as it affects converter output
voltage according to the ratio with the 600 mV feedback
reference. For example, a 6 mV offset between ground on
the ADP1821 and the converter power output causes a 1%
error in the converter output voltage.
the low-side MOSFET.
Rev. C | Page 19 of 24
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