参数资料
型号: ADP1877HC-EVALZ
厂商: Analog Devices Inc
文件页数: 15/32页
文件大小: 0K
描述: BOARD EVALUATION 13A ADP1877
标准包装: 1
主要目的: DC/DC,步降
输出及类型: 2,非隔离
输出电压: 1.05V,1.8V
电流 - 输出: 13A
输入电压: 6 ~ 14 V
稳压器拓扑结构: 降压
频率 - 开关: 600kHz
板类型: 完全填充
已供物品:
已用 IC / 零件: ADP1877
Data Sheet
SYNCHRONOUS RECTIFIER AND DEAD TIME
V IN = 2.75V TO 5.5V
ADP1877
The synchronous rectifier (low-side MOSFET) improves efficiency
by replacing the Schottky diode that is normally used in an
asynchronous buck regulator. In the ADP1877 , the antishoot-
VIN
VCCO
through circuit monitors the SW and DL nodes and adjusts the
low-side and high-side drivers to ensure break-before-make
switching to prevent cross-conduction or shoot-through between
the high-side and low-side MOSFETs. This break-before-make
switching is known as the dead time, which is not fixed and
depends on how fast the MOSFETs are turned on and off. In a
typical application circuit that uses medium sized MOSFETs
with input capacitance of approximately 3 nF, the typical dead
time is approximately 30 ns. When small and fast MOSFETs are
used, the dead time can be as low as 13 ns.
INPUT UNDERVOLTAGE LOCKOUT
When the bias input voltage, V IN , is less than the undervoltage
lockout (UVLO) threshold, the switch drivers stay inactive.
When V IN exceeds the UVLO threshold, the switchers start
switching.
INTERNAL LINEAR REGULATOR
The internal linear regulator is low dropout (LDO), meaning it
can regulate its output voltage, VCCO. VCCO powers up the
internal control circuitry and provides power for the gate
drivers. It is guaranteed to have more than 200 mA of output
ADP1877
Figure 27. Configuration for V IN < 5.5 V
OVERVOLTAGE PROTECTION
The ADP1877 has a built-in circuit for detecting output
overvoltage at the FB node. When the FB voltage, V FB , rises
above the overvoltage threshold, the low-side NMOSFET is
immediately turned on, and the high-side NMOSFET is turned
off until the V FB drops below the undervoltage threshold. This
action is known as the crowbar overvoltage protection. If the
overvoltage condition is not removed, the controller maintains
the feedback voltage between the overvoltage and undervoltage
thresholds, and the output is regulated to within approximately
+16% and ?10% of the regulation voltage. During an overvoltage
event, the SS node discharges toward zero through an internal
1 kΩ pull-down resistor. When the voltage at FB drops below
the undervoltage threshold, the soft start sequence restarts. The
following graph shows the overvoltage protection scheme in
action in PSM.
current capability, which is sufficient to handle the gate drive
requirements of typical logic threshold MOSFETs driven at up
to 1.5 MHz. VCCO is always active and cannot be shut down by
the EN1/EN2 pins. Bypass VCCO to AGND with a 1 μF or
greater capacitor.
Because the LDO supplies the gate drive current, the output of
VCCO is subject to sharp transient currents as the drivers
switch and the boost capacitors recharge during each switching
cycle. The LDO has been optimized to handle these transients
without overload faults. Due to the gate drive loading, using the
VCCO output for other external auxiliary system load is not
1
2
DH1
PGOOD1
VO1 = 1.8V SHORTED
TO 2.2V SOURCE
VIN (CH3)
recommended.
3 4
CH1 10V
CH2 5V
M200μs
A CH4
2.05V
The LDO includes a current limit well above the expected
CH3 5V
CH4 500mV
maximum gate drive load. This current limit also includes a
short-circuit fold back to further limit the VCCO current in the
event of a short-circuit fault.
The VDL pin provides power to the low-side driver. Connect
VDL to VCCO. Bypass VDL to PGND with a 1 μF (minimum)
ceramic capacitor, which must be placed close to the VDL pin.
For an input voltage less than 5.5 V, it is recommended to
bypass the LDO by connecting VIN to VCCO, as shown in
Figure 27, thus eliminating the dropout voltage. However, for
example, if the input range is 4 V to 7 V, the LDO cannot be
bypassed by shorting VIN to VCCO because the 7 V input has
exceeded the maximum voltage rating of the VCCO pin. In this
Figure 28. Overvoltage Protection in PSM
POWER GOOD
The PGOODx pin is an open-drain NMOS with an internal 12 kΩ
pull-up resistor connected between PGOODx and VCCO.
PGOODx is internally pulled up to VCCO during normal
operation and is active low when tripped. When the feedback
voltage, V FB , rises above the overvoltage threshold or drops
below the undervoltage threshold, the PGOODx output is
pulled to ground after a delay of 12 μs. The overvoltage or
undervoltage condition must exist for more than 12 μs for
PGOODx to become active. The PGOODx output also becomes
active if a thermal overload condition is detected.
case, use the LDO to drive the internal drivers, but keep in
mind that there is a dropout when V IN is less than 5 V.
Rev. D | Page 15 of 32
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