- 您现在的位置：买卖IC网 > PDF目录15363 > ADP1883ARMZ-1.0-R7 (Analog Devices Inc)IC REG CTRLR BUCK PWM CM 10-MSOP PDF资料下载
参数资料
| 型号： | ADP1883ARMZ-1.0-R7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 28/40页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 10-MSOP |
| 标准包装： | 1 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 1MHz |
| 占空比： | 45% |
| 电源电压： | 2.75 V ~ 20 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | ADP1883ARMZ-1.0-R7DKR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页当前第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页
ADP1882/ADP1883
THERMAL CONSIDERATIONS
The ADP1882/ADP1883 are used for dc-to-dc, step down, high
current applications that have an on-board controller and on-board
MOSFET drivers. Because applications may require up to 20 A
of load current delivery and be subjected to high ambient
temperature surroundings, the selection of external upper-side
and lower-side MOSFETs must be associated with careful thermal
consideration to not exceed the maximum allowable junction
temperature of 125°C. To avoid permanent or irreparable damage
if the junction temperature reaches or exceeds 155°C, the part
enters thermal shutdown, turning off both external MOSFETs,
and does not reenable until the junction temperature cools to
140°C (see the Thermal Shutdown section).
The maximum junction temperature allowed for the ADP1882/
ADP1883 ICs is 125°C. This means that the sum of the ambient
temperature (T A ) and the rise in package temperature (T R ), which
is caused by the thermal impedance of the package and the internal
power dissipation, should not exceed 125°C, as dictated by the
following expression:
T J = T R × T A
where:
T A is the ambient temperature.
T J is the maximum junction temperature.
T R is the rise in package temperature due to the power
dissipated from within.
The rise in package temperature is directly proportional to its
thermal impedance characteristics. The following equation
represents this proportionality relationship:
T R = θ JA × P DR(LOSS)
where:
For example, if the external MOSFET characteristics are θ JA
(10-lead MSOP) = 171.2°C/W, f SW = 300 kHz, I BIAS = 2 mA,
C upperFET = 3.3 nF, C lowerFET = 3.3 nF, V DR = 5.12 V, and V DD = 5.5 V,
then the power loss is
P DR(LOSS) = [ V DR × ( f SW C upperFET V DR + I BIAS )]
+ [ V DD × ( f SW C lowerFET V DD + I BIAS )]
= [5.12 × (300 × 10 3 × 3.3 × 10 ?9 × 5.12 + 0.002)]
+ [5.5 × (300 × 10 3 ×3.3 × 10 ?9 × 5.5 + 0.002)]
= 77.13 mW
The rise in package temperature is
T R = θ JA × P DR(LOSS)
= 171.2°C × 77.13 mW
= 13.2°C
Assuming a maximum ambient temperature environment of 85°C,
the junction temperature is
T J = T R × T A = 13.2°C + 85°C = 98.2°C
which is below the maximum junction temperature of 125°C.
DESIGN EXAMPLE
The ADP1882/ADP1883 are easy to use, requiring only a few
design criteria. For example, the example outlined in this section
uses only four design criteria: V OUT = 1.8 V, I LOAD = 15 A (pulsing),
V IN = 12 V (typical), and f SW = 300 kHz.
Input Capacitor
The maximum input voltage ripple is usually 1% of the
minimum input voltage (11.8 V × 0.01 = 120 mV).
V RIPP = 120 mV
V MAX,RIPPLE = V RIPP ? ( I LOAD,MAX × ESR )
= 120 mV ? (15 A × 0.001) = 45 mV
θ JA is the thermal resistance of the package from the junction to
the outside surface of the die, where it meets the surrounding air.
C IN,min =
I LOAD , MAX
4 f SW V MAX , RIPPLE
=
15 A
4 × 300 × 10 3 × 105 mV
P DR(LOSS) is the overall power dissipated by the IC.
The bulk of the power dissipated is due to the gate capacitance
of the external MOSFETs. The power loss equation of the MOSFET
drivers (see the MOSFET Driver Loss section in the Efficiency
Consideration section) is
P DR(LOSS) = [ V DR × ( f SW C upperFET V DR + I BIAS )]
= 120 μF
Choose five 22 μF ceramic capacitors. The overall ESR of five
22 μF ceramic capacitors is less than 1 mΩ.
I RMS = I LOAD /2 = 7.5 A
P CIN = ( I RMS ) 2 × ESR = (7.5A) 2 × 1 mΩ = 56.25 mW
+ [ V DD × ( f SW C lowerFET V DD + I BIAS )]
where:
C upperFET is the input gate capacitance of the upper-side MOSFET.
C lowerFET is the input gate capacitance of the lower-side MOSFET.
I BIAS is the dc current (2 mA) flowing into the upper-side and
lower-side drivers.
V DR is the driver bias voltage (that is, the low input voltage (V DD )
minus the rectifier drop (see Figure 81)).
V DD is the bias voltage
Rev. 0 | Page 28 of 40
相关PDF资料 |
PDF描述 |
|---|---|
| RCM30DCAD-S189 | CONN EDGECARD 60POS R/A .156 SLD |
| VE-J14-EW-F3 | CONVERTER MOD DC/DC 48V 100W |
| H2BXG-10105-V8-ND | JUMPER-H1501TR/A3048V/X 5" |
| VE-J14-EW-F1 | CONVERTER MOD DC/DC 48V 100W |
| GSM15DTBS-S189 | CONN EDGECARD 30POS R/A .156 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ADP190 | 制造商:AD 制造商全称:Analog Devices 功能描述:Logic Controlled, High-Side Power Switches |
| ADP190ACBZ-R7 | 功能描述:IC CTRLR HIGH SIDE PWR SW 4WLCSP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:2,500 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:35 毫欧 电流 - 输出 / 通道:- 电流 - 峰值输出:3A 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:MIC2545A-1YTSTRMIC2545A-1YTSTR-ND |
| ADP190CB-EVALZ | 功能描述:BOARD EVAL ADP190 RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:- 主要目的:数字电位器 嵌入式:- 已用 IC / 零件:AD5258 主要属性:- 次要属性:- 已供物品:板 相关产品:AD5258BRMZ1-ND - IC POT DGTL I2C1K 64P 10MSOPAD5258BRMZ10-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ100-ND - IC POT DGTL I2C 100K 64P 10MSOPAD5258BRMZ50-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ1-R7-ND - IC POT DGTL I2C 1K 64P 10MSOPAD5258BRMZ10-R7-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ50-R7-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ100-R7-ND - IC POT DGTL I2C 100K 64P 10MSOP |
| ADP191ACBZ-R7 | 功能描述:IC CTLR HIGH LSIDE PWR SW 4WLCSP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:2,500 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:35 毫欧 电流 - 输出 / 通道:- 电流 - 峰值输出:3A 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:MIC2545A-1YTSTRMIC2545A-1YTSTR-ND |
| ADP191CB-EVALZ | 功能描述:EVAL BOARD FOR ADP191 RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:- 主要目的:电信，线路接口单元（LIU） 嵌入式:- 已用 IC / 零件:IDT82V2081 主要属性:T1/J1/E1 LIU 次要属性:- 已供物品:板，电源，线缆，CD 其它名称:82EBV2081 |
发布紧急采购，3分钟左右您将得到回复。