参数资料
型号: AG003-01E
厂商: NVE Corp/Sensor Products
文件页数: 82/145页
文件大小: 0K
描述: ASSEMBLY CURRENT SENSOR EVAL
标准包装: 1
传感器类型: 磁性 GMR(大型磁阻传感)
接口: 模拟
嵌入式:
已供物品: 板,CD
已用 IC / 零件: AA 系列电流传感器
产品目录页面: 2839 (CN2011-ZH PDF)
相关产品: 391-1054-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC
391-1052-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1050-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1049-5-ND - SENSORS MAGNETIC FIELD 8MSOP
391-1048-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1045-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1032-5-ND - SENSORS MAGNETIC FIELD 8MSOP
391-1030-5-ND - SENSORS MAGNETIC FIELD 8MSOP
AB001-02-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1020-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC
更多...
其它名称: 391-1060
Application Notes
The end result in this case is that the mean free path length of the conduction electrons is fairly short,
resulting in a relatively high electrical resistance.
If an external magnetic field of sufficient magnitude is applied to this GMR material, it will overcome
the antiferromagnet coupling of the magnetizations between the two magnetic layers . At this point all
the electrons in both films will have the same spin . It will then become easier for the electrons two
move between the layers:
Spin States of the Magnetic Layers are the same;
Electrons Travel More Readily Through Entire Stack of GMR Material.
Average Mean Free Path of the Electrons is Long
External Magnetic Field Aligns
the Magnetization Directions of
Top and Bottom Films
Magnetization Direction of Top Film
Top Film
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
Conductive Interlayer
Bottom Film
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
Magnetization Direction of Bottom Film
Note that the mean free path length of the electrons has now increased . This results in an overall lower
electrical resistance for the GMR material . The change in resistivity of the material is shown on the
path length diagram below:
Resistivity Plot Showing Operate Points of GMR Material
With and Without an External Magnetic Field Applied;
Applying the External Field Results in Lower Device Resistance
Operate Point of Film,
Resistivity
No External Field Applied
Operate Point of Film
with External Field Applied
50
100
150
Mean Free Path Length of an Electron (Angstroms)
- 82 -
www.nve.com phone: 952-829-9217 fax: 952-829-9189
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