- 您现在的位置：买卖IC网 > PDF目录17124 > AG003-01E (NVE Corp/Sensor Products)ASSEMBLY CURRENT SENSOR EVAL PDF资料下载
参数资料
| 型号： | AG003-01E |
| 厂商： | NVE Corp/Sensor Products |
| 文件页数： | 83/145页 |
| 文件大小： | 0K |
| 描述： | ASSEMBLY CURRENT SENSOR EVAL |
| 标准包装： | 1 |
| 传感器类型： | 磁性 GMR（大型磁阻传感） |
| 接口： | 模拟 |
| 嵌入式： | 否 |
| 已供物品： | 板，CD |
| 已用 IC / 零件： | AA 系列电流传感器 |
| 产品目录页面： | 2839 (CN2011-ZH PDF) |
| 相关产品： | 391-1054-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC 391-1052-5-ND - SENSORS MAGNETIC FIELD 8SOIC 391-1050-5-ND - SENSORS MAGNETIC FIELD 8SOIC 391-1049-5-ND - SENSORS MAGNETIC FIELD 8MSOP 391-1048-5-ND - SENSORS MAGNETIC FIELD 8SOIC 391-1045-5-ND - SENSORS MAGNETIC FIELD 8SOIC 391-1032-5-ND - SENSORS MAGNETIC FIELD 8MSOP 391-1030-5-ND - SENSORS MAGNETIC FIELD 8MSOP AB001-02-ND - SENSORS MAGNETIC FIELD 8SOIC 391-1020-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC 更多... |
| 其它名称： | 391-1060 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页当前第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页第134页第135页第136页第137页第138页第139页第140页第141页第142页第143页第144页第145页
Application Notes
This change in resistance is the GMR effect.
The size of the resistance decrease is typically 4% to over 20%, depending on the material structure of
the GMR films . Most of NVE’s sensor products rely on a GMR material which exhibits 14% to 16%
decrease in resistance. The “percent GMR” of a given material is calculated using the following
formula:
% GMR = Change in Resistance / Minimum Resistance
For example, assume an electrical resistor is implemented with GMR material, and it shows a nominal
resistance of 5000 Ohms. Then a magnetic field is applied and with this field a minimum resistance of
4400 Ohms is achieved. The percent GMR is then 600/4400, or about 13.6%.
Not all GMR materials operate in the manner described above. All GMR materials rely on modulating
the difference between the magnetization directions of adjacent layers in the GMR film structure, but
some achieve this modulation in different ways. The other most common type of GMR material is
referred to as a “spin valve” GMR material. This type of material does not necessarily rely on anti-
ferromagnetic coupling of the adjacent magnetic layers in the GMR film. In this case one of the
magnetic layers is “pinned,” or fixed with respect to its magnetization direction. The magnetization
direction of the pinned layer will not move when exposed to normal operating magnetic fields.
Therefore, the externally applied magnetic field will modulate the direction of the other magnetic
layer, referred to as the “free” layer. As the angle between the free layer and the pinned layer varies,
the mean free path length of the electrons in the GMR film also varies, and therefore the electrical
resistance will change.
Fixing the magnetization direction of the pinned layer in spin valve GMR materials can be done in a
variety of ways. However, it is important that the layer is pinned in a robust manner; otherwise, the
pinning can be undone by application of a large magnetic field. This will destroy the operation of the
sensor. NVE uses the application of large magnetic fields and high anneal temperatures (over 240°C)
to set the pinned layer of the film. This layer cannot be unpinned with the application of any magnetic
field in the normal temperature range of operation. Therefore, the sensor cannot be damaged by large
magnetic fields. This is also true of NVE’s other GMR sensors; no damage to any NVE GMR sensor
product can result due to the application of extremely large magnetic fields.
One of NVE’s competitors in Europe introduced a GMR sensor in 1997 that could be damaged by
magnetic fields in the 250 Gauss range. This product has since been discontinued.
- 83 -
www.nve.com phone: 952-829-9217 fax: 952-829-9189
相关PDF资料 |
PDF描述 |
|---|---|
| 33470C | INDUCTOR 47UH 3.5A T/H TOROID |
| HM65-H1R8LFTR13 | INDUCTOR 1.8UH LOW PROFILE SMD |
| MCIMX25LPDKJ | KIT DEV MCIMX25 PDK FOR LINUX |
| 33221C | INDUCTOR 220UH 1.6A T/H TOROID |
| AIRD-01-220K | INDUCTOR PWR DRUM CORE 22UH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AG01 | 制造商:Sanken Electric Co Ltd 功能描述:Diode Switching 400V 0.7A 2-Pin 制造商:Sanken Electric Co Ltd 功能描述:DIODE ULT FAST REC AXIAL 制造商:Panasonic Industrial Company 功能描述:DIODE SUB P-EG01 |
| AG-01 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| AG01A | 制造商:Sanken Electric Co Ltd 功能描述:Diode Switching 600V 0.5A 2-Pin Bulk 制造商:Sanken Electric Co Ltd 功能描述:Diode Switching 600V 0.5A 2-Pin Pack |
| AG01AV | 制造商:Sanken Electric Co Ltd 功能描述:DIODE ULT FAST REC AXIAL |
| AG01AV0 | 制造商:Sanken Electric Co Ltd 功能描述:DIODE ULT FAST REC AXIAL |
发布紧急采购，3分钟左右您将得到回复。