参数资料
型号: AG003-01E
厂商: NVE Corp/Sensor Products
文件页数: 94/145页
文件大小: 0K
描述: ASSEMBLY CURRENT SENSOR EVAL
标准包装: 1
传感器类型: 磁性 GMR(大型磁阻传感)
接口: 模拟
嵌入式:
已供物品: 板,CD
已用 IC / 零件: AA 系列电流传感器
产品目录页面: 2839 (CN2011-ZH PDF)
相关产品: 391-1054-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC
391-1052-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1050-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1049-5-ND - SENSORS MAGNETIC FIELD 8MSOP
391-1048-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1045-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1032-5-ND - SENSORS MAGNETIC FIELD 8MSOP
391-1030-5-ND - SENSORS MAGNETIC FIELD 8MSOP
AB001-02-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1020-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC
更多...
其它名称: 391-1060
Application Notes
GMR Magnetic Field Sensors (Magnetometers)
The NVE standard line of magnetic field sensors use a unique configuration employing a Wheatstone
bridge of resistors and various forms of flux shields and concentrators. Using magnetic materials for
shielding eliminates the need for a bias field with GMR sensors. NVE has developed a process to
plates a thick layer of magnetic material on the sensor substrate. This layer forms a shield over the
GMR resistors underneath, essentially conducting any applied magnetic field away from the shielded
resistors. The configuration allows two resistors (opposite legs of the bridge) to be exposed to the
magnetic field. The other two resistors are located under the plated magnetic material, effectively
shielding them from the external applied magnetic field. When the external field is applied, the
exposed resistors decrease in electrical resistance while the other resistor pair remain unchanged,
causing a signal output at the bridge terminals.
The plating process developed by NVE for use in GMR sensor applications has another benefit: it
allows flux concentrators to be deposited on the substrate. These flux concentrators increase the
sensitivity of the raw GMR material by a factor of 2 to 100. The flux concentration factor is roughly
equivalent to the length of one shield divided by the length of the gap. This allows use of GMR
materials that saturate at higher fields. For example, to sense a field from 0 to 100 Oersteds, NVE
deposits a GMR sensor that saturates at a nominal 300 Oersteds and flux concentrators with a
magnification factor of three. The figure below shows the basic layout of the device:
Axis of sensitivity
Silicon substrate
(1300 μ m x 400 μ m)
Gap
Flux concentrator (2)
Metal interconnects
Magnetically shielded resistor (2)
Bonding pads (4)
(100 μ m x 100 μ m)
Magnetically active resistor pair
T YPICAL GMR M AGNETIC F IELD S ENSOR L AYOUT
- 94 -
www.nve.com phone: 952-829-9217 fax: 952-829-9189
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