参数资料
型号: AG003-01E
厂商: NVE Corp/Sensor Products
文件页数: 84/145页
文件大小: 0K
描述: ASSEMBLY CURRENT SENSOR EVAL
标准包装: 1
传感器类型: 磁性 GMR(大型磁阻传感)
接口: 模拟
嵌入式:
已供物品: 板,CD
已用 IC / 零件: AA 系列电流传感器
产品目录页面: 2839 (CN2011-ZH PDF)
相关产品: 391-1054-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC
391-1052-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1050-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1049-5-ND - SENSORS MAGNETIC FIELD 8MSOP
391-1048-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1045-5-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1032-5-ND - SENSORS MAGNETIC FIELD 8MSOP
391-1030-5-ND - SENSORS MAGNETIC FIELD 8MSOP
AB001-02-ND - SENSORS MAGNETIC FIELD 8SOIC
391-1020-5-ND - SENSORS MAGNETIC FIELD LP 8-SOIC
更多...
其它名称: 391-1060
Application Notes
GMR Materials Types Manufactured by NVE
NVE manufactures four different types of GMR materials for use in our sensor products. These GMR
materials are described below:
Standard Multilayer (ML) – This GMR material has AF (antiferromagnet) coupling, % GMR in the
range of 12% to 16%, magnetic saturation fields of about 300 Oersteds, stable temperature
characteristics for operation up to 150°C, and moderate hysteresis.
High Temperature Multilayer (HTM) – This GMR material has AF coupling, % GMR in the 8% -
10% range, magnetic saturation fields of about 80 Oersteds, stable temperature characteristics for
operation up to 200°C, and high hysteresis.
Low Hysteresis High Temperature Multilayer (LHHTM) – This GMR material is AF coupled, has
% GMR in the range of 8% - 10%, magnetic saturation fields of about 180 Oersteds, stable
temperature characteristics for operation up to 200°C, and low hysteresis.
Spin Valve (SV) – This GMR material has one pinned layer, has % GMR in the range of 4% - 5%,
magnetic saturation fields of about 25 Oersteds, stable temperature characteristics for operation up
to 200°C, and nearly zero hysteresis when operated in saturation mode.
The following table gives a brief comparison of these different GMR materials, and indicates in which
product prefix they are used:
GMR
Saturation
Temperature
Product
Material
ML
HTM
LHHTM
SV
% GMR
12%-16%
8%-10%
8%-10%
4%-5%
Field (Oe)
250 - 450
60 - 100
160 - 200
20-30
Range
-40 - +150
-40 - +200
-40 - +200
-40 - +200
Hysteresis
Medium
High
Low
Low
Prefixes
AA, AB,
AD
AAH, ABH,
ADH
ABL
AAV
In addition to these materials, NVE is currently developing more specialized GMR materials for
various sensor applications, including a bipolar output low hysteresis material and a spin dependent
tunneling material. Please check our web site for new product releases based on these new GMR
materials.
- 84 -
www.nve.com phone: 952-829-9217 fax: 952-829-9189
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