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参数资料
| 型号： | AGR09130EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 437K |
| 代理商： | AGR09130EF |
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09130E
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
4
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
12
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
—
9
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 26 V, IDQ = 1000 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VDS(ON)
—
0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—
72
—
pF
Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
3.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 920 MHz, 940 MHz, 960 MHz)
Linear Power Gain
(VDS = 26 V, POUT = 50 W, IDQ = 1000 mA)
GL
16
18
—
dB
Output Power
(VDS = 26 V, 1 dB compression, IDQ = 1000 mA)
P1dB
130
150
—
W
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 1000 mA)
—
55
—
%
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 26 V, POUT = 120 WPEP, IDQ = 1000 mA)
IM3
—
30
—
dBc
Input VSWR
VSWRI
—
2:1
—
Ruggedness
(VDS = 26 V, POUT = 130 W, IDQ = 1000 mA, f = 940 MHz,
VSWR = 5:1, all angles)
—
No degradation in output
power.
D
ra
ft
C
o
p
y
O
n
ly
400
200
(in Supplied Test Fixture)
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| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR1000 | 功能描述:可复位保险丝 10/9.6A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGR1100 | 功能描述:可复位保险丝 11/10.5A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGR1100-0.16 | 功能描述:可复位保险丝 AGR1100-0.16 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
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