参数资料
型号: AGR09130EF
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件页数: 7/10页
文件大小: 437K
代理商: AGR09130EF
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09130E
Typical Performance Characteristics (continued)
VDD = 26 VDC, IDQ = 1.0 A, TF = 30 °C, FORMAT = CW.
Figure 6. Power Gain and Drain Efficiency vs. Power Out
VDD = 26 V, IDQ = 1.0 A, PO = 50 W, TF = 30 °C, EDGE FORMAT = 3GPP GSM 05.05.
Figure 7. ACP, Power Gain, and Efficiency vs. Frequency
10
11
12
13
14
15
16
17
18
19
0
50
100
150
200
POWER OUT (POUT) (W)Z
POWER
GAIN
(P
G)
(dB)
Z
10
20
30
40
50
60
70
80
90
100
DRAIN
EFFICIENCY
(Eff)
(%)
Z
PG
Eff
960 MHz
920 MHz
960 MHz 940 MHz
920 MHz
940 MHz
-80
-70
-60
-50
-40
-30
-20
-10
0
920
925
930
935
940
945
950
955
960
FREQUENCY (MHz)Z
MODULATION
SPECTRUM
(d
Bc
)Z
0
5
10
15
20
25
30
35
40
POWER
GAIN
(dB)
AND
DRAIN
EFFICIENCY
(%)
Z
Eff
PG
+/- 400 kHz
+/- 600 kHz
D
ra
ft
C
o
p
y
O
n
ly
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相关代理商/技术参数
参数描述
AGR09130EU 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09180EF 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
AGR1000 功能描述:可复位保险丝 10/9.6A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C
AGR1100 功能描述:可复位保险丝 11/10.5A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C
AGR1100-0.16 功能描述:可复位保险丝 AGR1100-0.16 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C