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参数资料
| 型号： | AGR09130EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 437K |
| 代理商： | AGR09130EF |
AGR09130E
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09130E
A. Schematic
Parts List:
Microstrip line:
Z1 0.834 in. x 0.066 in.; Z2 0.066 in. x 0.066 in.; Z3 0.290 in. x 0.066 in.; Z4 0.050 in. x 0.180 in.; Z5 0.650 in. x 0.180 in.;
Z6 0.050 in. x 0.800 in.; Z7 0.132 in. x 0.800 in.; Z8 0.105 in. x 0.800 in.; Z9 0.050 in. x 0.800 in.; Z10 0.423 in. x 0.700 in.;
Z11 0.227 in. x 0.700 in.; Z12 0.920 in. x 0.180 in.; Z13 0.040 in. x 0.180 in.; Z14 0.470 in. x 0.066 in.; Z15 0.495 in. x 0.066 in.;
Z16 1.340 in. x 0.050 in.: Z17 1.100 in. x 0.050 in.
ATC
chip capacitor:
C1, C8, C16, C17: 47 pF 100B470JW; C3 1.5 pF 100B1R5BW; C4: 6.8 pF 100B6R8BW; C13, C14: 12 pF 100B120JW;
C5, C6, 10 pF 100B100JW; C7 5.6 pF 100B5R6BW; C9: 100 pF 100B101JW.
0603 chip capacitor: C10, C19: 220 pF.
K emet
: chip capacitor, C11, C26: 0.01 F C1206C103KRAC7800; C12, C20, C23, C28, C29: 0.1 F C1206C104KRAC7800.
J ohanson G iga-Trim
variable capacitor, 27291SL: C2, C15: 0.8 pF to 8 pF.
S prague
tantalum chip capacitor (35 V): C21, C24, C25, C27 10 F; C22 22 F.
1206 size fixed film chip resistor (0.25 W): R1: 51 RM73B2B510J; R2 56 k RM73B2B563J; R3 12 RM73B2B120J;
R4 1.2 k RM73B2B122J; R5 RM73B2B4R3J 4.3 .
K reger
ferrite bead: FB1 2743019447; FB2 2743021447.
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout
Figure 2. AGR09130E Test Circuit
DUT
R1
R4
C9
C25
Z1 C1 Z2
Z3
Z4
Z11
C16
Z12
Z13
Z14
Z15
C17
RF INPUT
VGG
VDD
RF
C2
Z5
Z9
C3
FB2
R3
C23
FB1
C10
Z7
C7
C4
C14
C13
Z10
Z16
C26
C28
C20
C19
C21
C24
Z6
Z8
C5 C6
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
C22
C15
C29
C8
R2
C12
Z17
OUTPUT
C11
R3
C27
MHz
2 3 1
Dra
ftCo
py
On
ly
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PDF描述 |
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| AGR09130EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09180EF | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09180EF | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09180EU | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR09180EU | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR1000 | 功能描述:可复位保险丝 10/9.6A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGR1100 | 功能描述:可复位保险丝 11/10.5A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
| AGR1100-0.16 | 功能描述:可复位保险丝 AGR1100-0.16 RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
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