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参数资料
| 型号： | AGR18060EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EU |
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60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18060E
A. Schematic
B. Component Layout
Parts List:
Microstrip line: Z1 0.065 in. x 0.283 in.; Z2 0.065 in. x 0.700 in.; Z3 0.065 in. x 0.308 in.; Z4 0.856 in.x 0.262 in.; Z5 1.045 in. x 0.140 in.;
Z6 0.051 in. x 0.470 in.; Z7 1.220 in. x 0.104 in.; Z8 0.998 in. x 0.422 in.; Z9 0.132 in. x 0.050 in.; Z10 0.984 in. x 0.093 in.;
Z11 0.132 in. x 0.244 in.; Z12 0.289 in. x 0.332 in.; Z13 0.132 in. x 0.200 in.; Z14 0.065 in. x 0.250 in.
ATC
B case chip capacitors: C3, C4: 10 pF, 100B100JCA500X; C11 8.2 pF 100B8R2JCA500X; C7 1000 pF, 100B102JCA500X.
Kemet
B case chip capacitors: C9, C12: 0.10 F, CDR33BX104AKWS.
Johanson Giga-Trim
variable capacitors: C5, C17: 0.4 pF—2.5 pF.
Vitramon
1206:
C2, C8: 22000 pF.
Murata
0805:
C13 0.01 F, GRM40X7R103K100AL.
0603:
C14 220 pF.
Fair-Rite
ferrite bead: FB1, #2743019447.
Sprague
tantalum, SMT: C1, C10: 22 F, 35 V.
Fixed film chip resistors: R1 510 Ω, 1/4 W, 0.08 x 0.13; R2 560 kΩ, 1/4 W, 0.08 x 0.13; R3 4.7 Ω, 1/4 W, 0.08 x 0.13.
PCB etched circuit boards.
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
Figure 2. AGR18060E Test Circuit Schematic
DUT
R3
C2
R2
R1
C1
FB1
Z6
Z1
C4
Z2
Z3
Z4
C9
7
C
8
C
Z15
2
1
C
3
1
C
C10
C14
RF INPUT
VGG
VDD
RF
C3
C5
OUTPUT
1
2
3
PINS
1. DRAIN
2. GATE
3. SOURCE
Z5
Z7
Z8
Z9
Z11
Z14
C11
Z10
Z12
Z13
Gate
Gnd
Drain
C5
C4
C1
C3
C2
C9
C11
C8
C12 C13C14
C7
C6
C10
R2
R3
FB1
R1
W1
S4
S1
S2
S3
2
3
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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