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参数资料
| 型号： | AGR18060EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 8/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EU |
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
E
0
6
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8
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R
G
A
Typical Performance Characteristics (continued)
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 11. Power Gain, IRL, IMD, and Efficiency Versus Supply Voltage
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 12. Gain, Efficiency, IRL, and Spectral Regrowth Versus Output Power
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POUT, OUTPUT POWER (WATTS)Z
G
PS
,P
OW
ER
GA
IN
(d
B),
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DR
AI
N
EF
FI
CI
EN
CY
(%
)Z
-90.0
-80.0
-70.0
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-10.0
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IR
L,
IN
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T
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TU
RN
LO
SS
(d
B),
Z
SP
EC
TR
AL
RE
GR
OW
TH
(d
Bc
)Z
IRL
EFFICIENCY
400 kHz
600 kHz
GPS
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POUT, OUTPUT POWER (WATTS)Z
G
PS
,P
OW
ER
GA
IN
(d
B),
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DR
AI
N
EF
FI
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)Z
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,E
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OR
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(%
)Z
EVM
GPS
EFFICIENCY
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| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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