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参数资料
| 型号： | AGR18060EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EU |
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
E
0
6
0
8
1
R
G
A
Typical Performance Characteristics
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
Figure 3. Series Equivalent Input and Output Impedances
Z
)f
(
z
H
M
S Ω
(
Complex Source Impedance)
ZL Ω
(Complex Optimum Load Impedance)
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7
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1
f(
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0
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1
–
5
6
.
4
8
1
.
4j
– j2.50
1842.5 (f2)
1.78 –
3
2
.
4
8
7
.
3j
– j2.44
8
7
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1
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3
f(
0
8
1
–
4
8
.
3
5
6
.
3j
– j2.40
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.49
0.0
A
N
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F
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IS
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IN
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CO
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(-j
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Zo
),
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R
IN
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U
C
TI
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SC
EP
TA
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C
E
(-
jB
/
Y
o)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZL
f3
f1
ZS
f3
f1
Z0 = 10 Ω
DUT
ZS
ZL
INPUT MATCH
OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
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PDF描述 |
|---|---|
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EU | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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