- 您现在的位置：买卖IC网 > PDF目录48363 > AGR18060EU (TRIQUINT SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR18060EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 5/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EU |
E
0
6
0
8
1
R
G
A
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, CW MEASUREMENT.
Figure 4. Output Power and Efficiency Versus Input Power
VDD = 26 V, FREQUENCY = 1842.5 MHz, CW MEASUREMENT.
Figure 5. Power Gain Versus Output Power
VDD = 26 V, IDQ = 500 mA, PIN = 25 dBm, CW MEASUREMENT.
Figure 6. Gain and IRL Versus Signal Frequency
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
80.00
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
PIN, INPUT POWER (WATTS)Z
PO
UT
,O
UT
PU
T
PO
W
ER
Z(WAT
TS
),
EF
FI
CI
EN
CY
Z(
%
)Z
-20.0
-15.0
-10.0
-5.0
0.0
IR
L,
IN
PU
T
RE
TU
RN
Z
LO
SS
Z(
dB
)Z
EFFICIENCY
POUT
IRL
12
13
14
15
16
1
10
100
POUT, OUTPUT POWER (WATTS)Z
G
PS
,P
OW
ER
GA
IN
(d
B)
Z
IDQ = 700 mA
IDQ = 500 mA
IDQ = 300 mA
10
11
12
13
14
15
16
1760
1780
1800
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)Z
G
PS
,P
OW
ER
GA
IN
ZZ
(d
B)
Z
-20
-15
-10
-5
0
IR
L,
IN
PU
TZ
RE
TU
RN
ZL
OS
S
(d
B)
ZZ
IRL
GPS
相关PDF资料 |
PDF描述 |
|---|---|
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EU | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。