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参数资料
| 型号： | AGR18060EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 6/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EU |
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
E
0
6
0
8
1
R
G
A
Typical Performance Characteristics (continued)
VDD = 26 V, IDQ = 500 mA, POUT = 60 W (PEP), TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 7. Gain, Efficiency, IRL, Versus Signal Frequency
VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 8. Intermodulation Distortion Versus Output Power
0
10
20
30
40
50
1760
1780
1800
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)Z
G
PS
,P
OW
ER
GA
IN
(d
B),
Z
DR
AI
N
EF
FI
CI
EN
CY
(%
)Z
-50
-40
-30
-20
-10
0
IR
L,
IN
PU
T
RE
TU
RN
LO
SS
Z
(d
B),
IM
3,Z
IN
TE
RM
OD
UL
AT
IO
NZ
DI
ST
OR
TI
ON
(d
Bc
)Z
IRL
EFFICIENCY
IM3
GPS
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
1.00
10.00
100.00
POUT, OUTPUT POWER (WATTS) PEPZ
IM
3,
IN
TE
RM
OD
UL
AT
IO
N
DI
ST
OR
TI
ON
(d
Bc
)Z
IDQ = 300 mA
IDQ = 500 mA
IDQ = 900 mA
IDQ = 700 mA
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| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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