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参数资料
| 型号： | AM29BDD160GB54DKE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封装： | PLASTIC, QFP-80 |
| 文件页数： | 27/80页 |
| 文件大小： | 3476K |
| 代理商： | AM29BDD160GB54DKE |
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Am29BDD160G
31
26h
4Ch
0000h
Max. time out for full chip erase 2N times typical (00h = not supported)
Table 15. CFI System Interface String (Sheet 2 of 2)
Table 16. CFI Device Geometry Definition
Addresses
(x32 Mode)
Addresses
(x16 Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2N byte
28h
29h
50h
52h
0005h
0000h
Flash Device Interface description (for complete description, please
refer to CFI publication 100)
0000 = x8-only asynchronous interface
0001 = x16-only asynchronous interface
0002 = supports x8 and x16 via BYTE# with asynchronous interface
0003 = x 32-only asynchronous interface
0005 = supports x16 and x32 via WORD# with asynchronous interface
2Ah
2Bh
54h
56h
0000h
Max. number of byte in multi-byte program = 2N
(00h = not supported)
2Ch
58h
0003h 0004h
Number of Erase Block Regions within device 0003 = Speed options
54D, 65D, 65A
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
001Dh
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Table 17. CFI Primary Vendor-Specific Extended Query (Sheet 1 of 3)
Addresses
(x32 Mode)
Addresses
(x16 Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
88h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BDD160GB54DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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参数描述 |
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