参数资料
型号: AM29BDD160GB54DKE
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
封装: PLASTIC, QFP-80
文件页数: 63/80页
文件大小: 3476K
代理商: AM29BDD160GB54DKE
64
Am29BDD160G
AC CHARACTERISTICS
Hardware Reset (RESET#)
Note:Not 100% tested.
Parameter
Description
Test Setup
All Speed Options
Unit
JEDEC
Std.
tREADY
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See
Note)
Max
11
s
tREADY
RESET# Pin Low (NOT During
Embedded Algorithms) to Read or
Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See
Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
s
tRB
RY/BY# Recovery Time
Min
0
ns
tREADY
RESET# Active for Bank NOT Executing
Embedded Algorithm
Max
500
ns
tRH
RESET# High Time before Read
Max
50
ns
tREADY
RESET# Active for Bank Executing
Embedded Algorithm
Max
11
s
tDRNE
RESET# Delay to Read Mode During
Normal Erase
Max
7
s
tRMX
RESET# Delay to Read Mode if RESET#
is held active for maximum delay (see
previous two parameters)
Max
50
ns
相关PDF资料
PDF描述
AM29BDD160GB54DKF 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DKI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DKK 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DPBE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DPBI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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