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参数资料
| 型号： | AM29BDD160GB54DKE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封装： | PLASTIC, QFP-80 |
| 文件页数： | 49/80页 |
| 文件大小： | 3476K |
| 代理商： | AM29BDD160GB54DKE |
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Am29BDD160G
51
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a write operation: DQ2, DQ3, DQ5, DQ6,
DQ7, and RY/BY#. Table 23 and the following sub-
sections describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determin-
ing whether a program or erase operation is
complete or in progress. These three bits are dis-
cussed first.
DQ7: Data# Polling
The Am29BDD160 features a Data# polling flag as a
method to indicate to the host system whether the
embedded algorithms are in progress or are com-
plete. During the Embedded Program Algorithm an
attempt to read the bank in which programming was
initiated will produce the complement of the data last
written to DQ7. Upon completion of the Embedded
Program Algorithm, an attempt to read the device
will produce the true last data written to DQ7. Note
that DATA# polling returns invalid data for the ad-
dress being programmed or erased.
For example, the data read for an address pro-
grammed as 0000 0000 1000 0000b will return
XXXX XXXX 0XXX XXXXb during an Embedded Pro-
gram operation. Once the Embedded Program
Algorithm is complete, the true data is read back on
DQ7. Note that at the instant when DQ7 switches to
true data, the other bits may not yet be true. How-
ever, they will all be true data on the next read from
the device. Please note that Data# polling may give
misleading status when an attempt is made to write
to a protected sector.
For chip erase, the Data# polling flag is valid after
the rising edge of the sixth WE# pulse in the six
write pulse sequence. For sector erase, the Data#
polling is valid after the last rising edge of the sector
erase WE# pulse. Data# polling must be performed
at sector addresses within any of the sectors being
erased and not a sector that is a protected sector.
Otherwise, the status may not be valid. DQ7 = 0
during an Embedded Erase Algorithm (chip erase or
sector erase operation) but will return a “1” after the
operation completes because it will have dropped
back into read mode.
In asynchronous mode, just prior to the completion
of the Embedded Algorithm operations, DQ7 may
change asynchronously while OE# is asserted low.
(In synchronous mode, ADV# exhibits this behavior.)
The status information may be invalid during the in-
stance of transition from status information to array
(memory) data. An extra validity check is therefore
specified in the data polling algorithm. The valid
array data on DQ31–DQ0 (DQ15–DQ0 when WORD#
= 0) is available for reading on the next successive
read attempt.
The Data# polling feature is only active during the
Embedded Programming Algorithm, Embedded Erase
Algorithm, Erase Suspend, Erase Suspend-Program
mode, or sector erase time-out.
If the user attempts to write to a protected sector,
Data# polling will be activated for about 1 s: the
device will then return to read mode, with the data
from the protected sector unchanged. If the user at-
tempts to erase a protected sector, Toggle Bit (DQ6)
will be activated for about 150 s; the device will
then return to read mode, without having erased the
protected sector.
Table 23 shows the outputs for Data# Polling on
DQ7. Figure 6 shows the Data# Polling algorithm.
Figure 27 shows the timing diagram for synchronous
status DQ7 data polling.
RY/BY#: Ready/Busy#
The device provides a RY/BY# open drain output pin
as a way to indicate to the host system that the Em-
bedded Algorithms are either in progress or have
been completed. If the output is low, the device is
busy with either a program, erase, or reset opera-
tion. If the output is floating, the device is ready to
accept any read/write or erase operation. When the
RY/BY# pin is low, the device will not accept any ad-
ditional program or erase commands with the
exception of the Erase suspend command. If the de-
vice has entered Erase Suspend mode, the RY/BY#
output will be floating. For programming, the RY/
BY# is valid (RY/BY# = 0) after the rising edge of
the fourth WE# pulse in the four write pulse se-
quence. For chip erase, the RY/BY# is valid after the
rising edge of the sixth WE# pulse in the six write
pulse sequence. For sector erase, the RY/BY# is also
valid after the rising edge of the sixth WE# pulse.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is complete, which re-
q u i re s a t i me o f t
READ Y (during Embedded
Algorithms). The system can thus monitor RY/BY# to
determine whether the reset operation is complete.
If RESET# is asserted when a program or erase op-
eration is not executing (RY/BY# pin is “floating”),
the reset operation is completed in a time of t
READY
(not during Embedded Algorithms). The system can
read data t
RH after the RESET# pin returns to VIH.
Since the RY/BY# pin is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with
a pull-up resistor to V
CC. An external pull-up resistor
is required to take RY/BY# to a V
IH level since the
output is an open drain.
Table 23 shows the outputs for RY/BY#. Figures 15,
19, 21 and 22 shows RY/BY# for read, reset, pro-
gram, and erase operations, respectively.
相关PDF资料 |
PDF描述 |
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| AM29BDD160GB54DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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