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参数资料
| 型号： | AM29BDD160GB54DKE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封装： | PLASTIC, QFP-80 |
| 文件页数： | 44/80页 |
| 文件大小： | 3476K |
| 代理商： | AM29BDD160GB54DKE |
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Am29BDD160G
47
Legend:
BA = Address of the bank that is being switched to autose-
lect mode, is in bypass mode, or is being erased. Deter-
mined by A18 and A17, see Tables 11 and 12 for more
detail.
PA = Program Address (A18:A-1). Addresses latch on the
falling edge of the WE# or CE# pulse, whichever hap-
pens later.
PD = Program Data (DQ15:DQ0) written to location PA.
Data latches on the rising edge of WE# or CE# pulse,
whichever happens first.
RA = Read Address (A18:A-1).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (A18:A11) for verifying (in autoselect
mode), erasing, or applying security commands
WD = Write Data. See “Configuration Register” definition for
specific write data. Data latched on rising edge of WE#.
X = Don’t care
Note:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells in table denote read cycles. All other cycles
are write operations.
4. During unlock cycles, (lower address bits are AAA or
555h as shown in table) address bits higher than A11
Table 21. Memory Array Command Definitions (x16 Mode)
Command (Notes)
Cycles
Bus Cycles (Notes 1–4)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (5)
1
RA
RD
Reset (6)
1
XXX
F0
Autoselec
t (7)
Manufactur
er ID
4
AAA
AA
555
55
AAA
90
(BA)X0
0
01
Device ID
(11)
6
AAA
AA
555
55
AAA
90
(BA)X0
2
7E
(BA)X1C
08
(BA)X1E
00/
01
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
555
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Program/Erase
Suspend (12)
1
BA
B0
Program/Erase Resume
(13)
1
BA
30
CFI Query (14, 15)
1
AA
98
Accelerated Program
(16)
2
XX
A0
PA
PD
Configuration Register
Verify (15)
3
AAA
AA
555
55
(BA)55
5
C6
(BA)XX
RD
Configuration Register
Write (17)
4
AAA
AA
555
55
AAA
D0
XX
WD
Unlock Bypass Entry
(18)
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
(18)
2
XX
A0
PA
PD
Unlock Bypass Erase
(18)
2
XX
80
XX
10
Unlock Bypass CFI (14,
18)
1
XX
98
Unlock Bypass Reset
(18)
2
XX
90
XX
00
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BDD160GB54DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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