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参数资料
| 型号： | AM29BDD160GB54DKE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封装： | PLASTIC, QFP-80 |
| 文件页数： | 38/80页 |
| 文件大小： | 3476K |
| 代理商： | AM29BDD160GB54DKE |
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Am29BDD160G
41
erased! If the Password Protection Mode Locking Bit
is verified as program without margin, the Password
Protection Mode Locking Bit Program command can
be executed to improve the program margin. Once
the Password Protection Mode Locking Bit is pro-
grammed, the Persistent Sector Protection Locking
Bit program circuitry is disabled, thereby forcing the
device to remain in the Password Protection mode.
Exiting the Mode Locking Bit Program command is
accomplished by writing the Read/Reset command.
The Password Protection Mode Locking Bit Program
command is permitted if the SecSi sector is enabled.
Persistent Sector Protection Mode Locking
Bit Program Command
The Persistent Sector Protection Mode Locking Bit
Program Command programs the Persistent Sector
Protection Mode Locking Bit, which prevents the
Password Mode Locking Bit from ever being pro-
grammed. If the Persistent Sector Protection Mode
Locking Bit is verified as programmed without mar-
gin, the Persistent Sector Protection Mode Locking
Bit Program Command should be reissued to im-
prove program margin. By disabling the program
circuitry of the Password Mode Locking Bit, the de-
vice is forced to remain in the Persistent Sector
Protection mode of operation, once this bit is set. Ex-
iting the Persistent Protection Mode Locking Bit
Program command is accomplished by writing the
Read/Reset command.
The Persistent Sector Protection Mode Locking Bit
Program command is permitted if the SecSi sector is
enabled.
SecSi Sector Protection Bit Program
Command
The SecSi Sector Protection Bit Program Com-
mand programs the SecSi Sector Protection Bit,
which prevents the SecSi sector memory from
being cleared. If the SecSi Sector Protection Bit
is verified as programmed without margin, the
SecSi Sector Protection Bit Program Command
should be reissued to improve program margin.
Exiting the V
CC-level SecSi Sector Protection Bit
Program Command is accomplished by writing
the Read/Reset command.
The SecSi Sector Protection Bit Program command is
permitted if the SecSi sector is enabled.
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the PPB
Lock bit if it is cleared either at reset or if the Pass-
word Unlock command was successfully executed.
There is no PPB Lock Bit Clear command. Once the
PPB Lock Bit is set, it cannot be cleared unless the
device is taken through a power-on clear or the
Password Unlock command is executed. Upon setting
the PPB Lock Bit, the PPBs are latched into the DYBs.
If the Password Mode Locking Bit is set, the PPB Lock
Bit status is reflected as set, even after a power-on
reset cycle. Exiting the PPB Lock Bit Set command is
accomplished by writing the Read/Reset command.
The PPB Lock Bit Set command is permitted if the
SecSi sector is enabled.
DYB Write Command
The DYB Write command is used to set or clear a
DYB for a given sector. The high order address bits
(A18–A11) are issued at the same time as the code
01h or 00h on DQ7-DQ0. All other DQ data bus pins
are ignored during the data write cycle. The DYBs
are modifiable at any time, regardless of the state of
the PPB or PPB Lock Bit. The DYBs are cleared at
power-up or hardware reset.Exiting the DYB Write
command is accomplished by writing the Read/Reset
command.
The DYB Write command is permitted if the SecSi
sector is enabled.
Password Unlock Command
The Password Unlock command is used to clear the
PPB Lock Bit so that the PPBs can be unlocked for
modification, thereby allowing the PPBs to become
accessible for modification. The exact password must
be entered in order for the unlocking function to oc-
cur. This command cannot be issued any faster than
2 s at a time to prevent a hacker from running
through the all 64-bit combinations in an attempt to
correctly match a password. If the command is is-
sued before the 2 s execution window for each
portion of the unlock, the command will be ignored.
The Password Unlock function is accomplished by
writing Password Unlock command and data to the
device to perform the clearing of the PPB Lock Bit.
The password is 64 bits long, so the user must write
the Password Unlock command 2 times for a x32 bit
data bus and 4 times for a x16 data bus. A0 is used
to determine whether the 32 bit data quantity is
used to match the upper 32 bits or lower 32 bits. A0
and A
-1 is used for matching when the x16 bit data
bus is set command is address order specific. In
other words, for the x32 data bus configuration, the
lower 32 bits of the password are written first and
then the upper 32 bits of the password are written.
For the x16 data bus configuration, the lower ad-
dress A0:A
-1= 00, the ne xt Pass wo rd Unlo c k
command is to A0:A
-1= 01, then to A0:A-1= 10, and
finally to A0:A
-1= 11. Writing out of sequence results
in the Password Unlock not returning a match with
the password and the PPB Lock Bit remains set.
Once the Password Unlock command is entered, the
RDY/BSY# pin goes LOW indicating that the device is
busy. Also, reading the small bank (25% bank) re-
sults in the DQ6 pin toggling, indicating that the
Password Unlock function is in progress. Reading the
large bank (75% bank) returns actual array data.
Approximately 1uSec is required for each portion of
the unlock. Once the first portion of the password
unlock completes (RDY/BSY# is not driven and DQ6
does not toggle when read), the Password Unlock
相关PDF资料 |
PDF描述 |
|---|---|
| AM29BDD160GB54DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB54DPBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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