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| 型号： | Am29LV400T-90RWAEB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩x 8-Bit/256亩x 16位），3.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 18/40页 |
| 文件大小： | 516K |
| 代理商： | AM29LV400T-90RWAEB |
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25
Am29LV400
PR EL IMIN AR Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
CL
6.2 k
3.3 V
Device
Under
Test
20514C-14
Figure 10.
Test Setup
Note: Diodes are IN3064 or equivalent
Test Condition
-90R,
-100
-120,
-150
Unit
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
Output
Measurement Level
Input
20514C-15
Figure 11.
Input Waveforms and Measurement Levels
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV400T-90RWAC | Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes |
| AM29LV400B-90RWAC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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| Am29LV640DL90RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| Am29LV641DH90RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
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