参数资料
型号: Am29LV400T-90RWAEB
厂商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512亩x 8-Bit/256亩x 16位),3.0伏的CMOS只引导扇区闪存
文件页数: 21/40页
文件大小: 516K
代理商: AM29LV400T-90RWAEB
Am29LV400
28
PREL I M I N AR Y
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
-90R
-100
-120
-150
JEDEC
Std.
Description
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
30
40
ns
tFHQV
BYTE# Switching High to Output Active
Min
90
100
120
150
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
tELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
tFLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
tELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
tFHQV
BYTE#
Switching
from byte
to word
mode
20514C-18
Figure 14.
BYTE# Timings for Read Operations
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
20514C-19
Figure 15.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
tHOLD (tAH)
tSET
(tAS)
相关PDF资料
PDF描述
AM29LV400T-90RWAC Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
AM29LV400B-90RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV640DH90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Am29LV640DL90RZE 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
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