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| 型号： | Am29LV400T-90RWAEB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4兆位（512亩x 8-Bit/256亩x 16位），3.0伏的CMOS只引导扇区闪存 |
| 文件页数： | 26/40页 |
| 文件大小： | 516K |
| 代理商： | AM29LV400T-90RWAEB |
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Am29LV400
32
PREL I M I N AR Y
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
tOE
High Z
DQ7
DQ0–DQ6
RY/BY#
tBUSY
Complement
True
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
Status Data
Complement
Status Data
True
Valid Data
tACC
tRC
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
20514C-22
Figure 18.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
tOE
DQ6/DQ2
RY/BY#
tBUSY
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
tACC
tRC
Valid Data
Valid Status
(first read)
(second read)
(stops toggling)
Valid Status
VA
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
20514C-23
Figure 19.
Toggle Bit Timings (During Embedded Algorithms)
相关PDF资料 |
PDF描述 |
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| AM29LV400T-90RWAC | Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes |
| AM29LV400B-90RWAC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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