参数资料
型号: AO4407A
厂商: Alpha & Omega Semiconductor Inc
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH -30V -12A 8-SOIC
产品目录绘图: 8-SOIC
其它图纸: AO4xxx Series 8-SOIC Top
AO4xxx Series 8-SOIC End
AO4xxx Series 8-SOIC Side
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 12A,20V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 39nC @ 10V
输入电容 (Ciss) @ Vds: 2600pF @ 15V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 1668 (CN2011-ZH PDF)
其它名称: 785-1022-6
AO4407A
30V P-Channel MOSFET
General Description
The AO4407A uses advanced trench technology to
provide excellent R DS(ON) , and ultra-low low gate charge
Product Summary
V DS = -30V
I D = -12A (V GS = -20V)
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
R DS(ON) < 11m
R DS(ON) < 13m
R DS(ON) < 17m
(V GS = -20V)
(V GS = -10V)
(V GS = -6V)
* RoHS and Halogen-Free Complaint
100% UIS Tested
100% Rg Tested
SOIC-8
D
D
Top View
D
D
S
S
G
Bottom View
G
D
S
S
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T A =25°C
Symbol
V DS
V GS
Maximum
-30
±25
-12
Units
V
V
Current A
Pulsed Drain Current B
Avalanche Current G
T A =70°C
I D
I DM
I AR
-10
-60
-26
A
Repetitive avalanche energy L=0.3mH
G
E AR
101
mJ
Power Dissipation A
T A =25°C
T A =70°C
P D
3.1
2.0
W
Junction and Storage Temperature Range
T J , T STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
R θ JA
R θ JL
32
60
17
40
75
24
°C/W
°C/W
°C/W
Rev.11.0 June 2013
www.aosmd.com
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