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参数资料
| 型号： | AO4435 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 190K |
| 代理商： | AO4435 |
AO4435
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ = 55°C
-5
IGSS
±100
nA
VGS(th)
-1.7
-2.3
-3
V
ID(ON)
-80
A
11
14
TJ=125°C
15
19
15
18
27
36
gFS
22
S
VSD
-0.74
-1
V
IS
-3.5
A
Ciss
1130
1400
pF
Coss
240
pF
Crss
155
pF
Rg
1
5.8
8
Qg(10V)
18
24
nC
Qg(4.5V)
9.5
Qgs
5.5
nC
Qgd
3.3
nC
tD(on)
8.7
ns
tr
8.5
ns
tD(off)
18
ns
tf
7
ns
trr
25
30
ns
Qrr
12
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Total Gate Charge
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
m
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-10A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
IS = -1A,VGS = 0V
VDS = -5V, ID = -10A
VGS = -5V, ID = -5A
VGS = -10V, ID = -10A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS = VGS ID = -250A
VDS = -30V, VGS = 0V
VDS = 0V, VGS = ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID = -250A, VGS = 0V
VGS = -10V, VDS = -5V
VGS = -20V, ID = -11A
Reverse Transfer Capacitance
IF=-10A, dI/dt=100A/s
A: The value of R θJA is measured with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
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| AO4435_102 | 功能描述:MOSFET P-CH 30V 10.5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:10.5A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:14 毫欧 @ 11A，20V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:24nC @ 10V 不同 Vds 时的输入电容（Ciss）:1400pF @ 15V 功率 - 最大值:3.1W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4435_103 | 功能描述:MOSFET P-CH 30V 10.5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:10.5A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:14 毫欧 @ 11A，20V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:24nC @ 10V 不同 Vds 时的输入电容（Ciss）:1400pF @ 15V 功率 - 最大值:3.1W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4435_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
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