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参数资料
| 型号： | AO4456 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 307K |
| 代理商： | AO4456 |
AO4456
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.1
TJ=125°C
20
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.2
1.8
2.4
V
ID(ON)
120
A
3.8
4.6
TJ=125°C
5.9
7.4
4.5
5.6
m
gFS
112
S
VSD
0.5
0.7
V
IS
5
A
Ciss
4320
5185
pF
Coss
570
pF
Crss
310
493
pF
Rg
0.2
0.5
0.9
Qg(10V)
60
77
95
nC
Qg(4.5V)
30
44
42
nC
Qgs
9.8
nC
Qgd
16
nC
tD(on)
11
ns
tr
10
ns
tD(off)
46
ns
tf
9.5
ns
trr
12
15
ns
Qrr
20
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=18A
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
IDSS
mA
VDS=VGS ID=250A
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=500A/s
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board
with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a s ingle pulse rating.
Rev9: March 2011
www.aosmd.com
Page 2 of 7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4458 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4459 | 功能描述:MOSFET P-CH -30V -6.5A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4459_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4459L | 功能描述:MOSFET P-CH 30V 6.5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:6.5A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:46 毫欧 @ 6.5A，10V 不同 Id 时的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:16nC @ 10V 不同 Vds 时的输入电容（Ciss）:830pF @ 15V 功率 - 最大值:3.1W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4462 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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