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| 型号： | AOT4N60 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 4A TO-220 |
| 产品目录绘图： | TO-220 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 615pF @ 25V |
| 功率 - 最大： | 104W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
| 其它名称： | 785-1187-5 |
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
BV DSS
/ ? TJ
I DSS
I GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
I D =250 μ A, V GS =0V, T J =25°C
I D =250 μ A, V GS =0V, T J =150°C
ID=250 μ A, VGS=0V
V DS =600V, V GS =0V
V DS =480V, T J =125°C
V DS =0V, V GS =±30V
600
700
0.69
1
10
±100
V
V/ o C
μ A
n Α
V GS(th)
R DS(ON)
g FS
V SD
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V DS =5V I D =250 μ A
V GS =10V, I D =2A
V DS =40V, I D =2A
I S =1A,V GS =0V
3
4
1.9
7.4
0.77
4.5
2.2
1
V
?
S
V
I S
I SM
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
4
16
A
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
400
511
615
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =25V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
40
3.5
3.3
51
4.4
4.2
65
5.3
6.3
pF
pF
?
SWITCHING PARAMETERS
Q g
Total Gate Charge
15
18
nC
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
V GS =10V, V DS =480V, I D =4A
V GS =10V, V DS =300V, I D =4A,
R G =25 ?
I F =4A,dI/dt=100A/ μ s,V DS =100V
3
7.6
20.2
28.7
36
27
212
3.6
9.1
30
42
51
40
254
nC
nC
ns
ns
ns
ns
ns
Q rr
Body Diode Reverse Recovery Charge I F =4A,dI/dt=100A/ μ s,V DS =100V
1.6
1.9
μ C
A. The value of R θ JA is measured with the device in a still air environment with T A =25 ° C.
B. The power dissipation P D is based on T J(MAX) =150 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 ° C, Ratings are based on low frequency and duty cycles to keep initial
T J =25 ° C.
D. The R θ JA is the sum of the thermal impedence from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX) =150 ° C. The SOA curve provides a single pulse rating.
G. L=60mH, I AS =2.5A, V DD =150V, R G =25 ? , Starting T J =25 ° C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.10.0: October 2013
www.aosmd.com
Page 2 of 6
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| AOT500L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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