参数资料
型号: APA150-FGG256
厂商: Microsemi SoC
文件页数: 147/178页
文件大小: 0K
描述: IC FPGA PROASIC+ 150K 256-FBGA
标准包装: 90
系列: ProASICPLUS
RAM 位总计: 36864
输入/输出数: 186
门数: 150000
电源电压: 2.3 V ~ 2.7 V
安装类型: 表面贴装
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-FPBGA(17x17)
ProASICPLUS Flash Family FPGAs
2- 60
v5.9
Synchronous SRAM Write
Note: The plot shows the normal operation status.
Figure 2-33 Synchronous SRAM Write
Table 2-57 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/Industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx
Description
Min.
Max.
Units
Notes
CCYC
Cycle time
7.5
ns
CMH
Clock high phase
3.0
ns
CML
Clock low phase
3.0
ns
DCH
DI hold from WCLKS
0.5
ns
DCS
DI setup to WCLKS
1.0
ns
WACH
WADDR hold from WCLKS
0.5
ns
WDCS
WADDR setup to WCLKS
1.0
ns
WPCA
New WPE access from WCLKS
3.0
ns
WPE is invalid while
PARGEN is active
WPCH
Old WPE valid from WCLKS
0.5
ns
WRCH, WBCH WRB & WBLKB hold from WCLKS
0.5
ns
WRCS, WBCS
WRB & WBLKB setup to WCLKS
1.0
ns
Note: On simultaneous read and write accesses to the same location, DI is output to DO.
WCLKS
WPE
WADDR, DI
WRB, WBLKB
Cycle Start
tWRCH, tWBCH
tWRCS, tWBCS
tDCS, tWDCS
tWPCH
tDCH, tWACH
tWPCA
tCMH
tCML
tCCYC
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