参数资料
型号: APA150-FGG256
厂商: Microsemi SoC
文件页数: 150/178页
文件大小: 0K
描述: IC FPGA PROASIC+ 150K 256-FBGA
标准包装: 90
系列: ProASICPLUS
RAM 位总计: 36864
输入/输出数: 186
门数: 150000
电源电压: 2.3 V ~ 2.7 V
安装类型: 表面贴装
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-FPBGA(17x17)
ProASICPLUS Flash Family FPGAs
v5.9
2-63
Asynchronous Write and Read to the Same Location
Note: The plot shows the normal operation status.
Figure 2-36 Asynchronous Write and Read to the Same Location
Table 2-60 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/Industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx
Description
Min.
Max.
Units
Notes
ORDA
New DO access from RB
7.5
ns
ORDH
Old DO valid from RB
3.0
ns
OWRA
New DO access from WB
3.0
ns
OWRH
Old DO valid from WB
0.5
ns
RAWRS
RB
↓ or RADDR from WB ↓
5.0
ns
RAWRH
RB
↑ or RADDR from WB ↑
5.0
ns
Notes:
1. During an asynchronous read cycle, each write operation (synchronous or asynchronous) to the same location will automatically
trigger a read operation which updates the read data. Refer to the ProASICPLUS RAM and FIFO Blocks application note for more
information.
2. Violation or RAWRS will disturb access to the OLD data.
3. Violation of RAWRH will disturb access to the NEWER data.
RB, RADDR
OLD
NEWER
NEW
t
ORDA
t
ORDH
t
OWRH
t
RAWRH
WB = {WRB+WBLKB}
DO
t
OWRA
t
RAWRS
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