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参数资料
| 型号： | APT44GA60BD30C |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1
-
2010
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
V
ces
Collector Emitter Voltage
600
V
I
C1
Continuous Collector Current @ T
C = 25°C
78
A
I
C2
Continuous Collector Current @ T
C = 100°C
44
I
CM
Pulsed Collector Current 1
130
V
GE
Gate-Emitter Voltage 2
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
337
W
SSOA
Switching Safe Operating Area @ T
J = 150°C
130A @ 600V
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
High power PFC boost
Welding
UPS, solar, and other inverters
High frequency, high efciency industrial
FEATURES
Fast switching with low EMI
Very Low E
off
for maximum efciency
Ultra low C
res
for improved noise immunity
Low conduction loss
Low gate charge
Increased intrinsic gate resistance for low EMI
RoHS compliant
APT44GA60BD30C
APT44GA60SD30C
600V
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E
off is
achieved through leading technology silicon design and lifetime control processes. A
reduced E
off - VCE(ON) tradeoff results in superior efciency compared to other IGBT tech-
nologies. Low gate charge and a greatly reduced ratio of C
res/Cies provide excellent noise
immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and
capacitance of the poly-silicone gate structure help control di/dt during switching, resulting
in low EMI, even when switching at high frequency. This device has a lower V
CE(on) than a
combi (IGBT and Diode)
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
V
GE = 0V, IC = 1.0mA
600
V
CE(on)
Collector-Emitter On Voltage
V
GE = 15V,
I
C = 26A
T
J = 25°C
1.5
1.6
T
J = 125°C
1.9
V
GE(th)
Gate Emitter Threshold Voltage
V
GE =VCE , IC = 1mA
3
4.5
6
I
CES
Zero Gate Voltage Collector Current
V
CE = 600V,
V
GE = 0V
T
J = 25°C
275
μA
T
J = 125°C
3000
I
GES
Gate-Emitter Leakage Current
V
GS = ±30V
±100
nA
TO-247
D3PAK
APT44GA60SD30C
APT44GA60BD30C
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| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
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