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参数资料
| 型号： | APT44GA60BD30C |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1
-
2010
Typical Performance Curves
APT44GA60B_SD30C
0
20
40
60
80
100
25
50
75
100
125
150
0
0.5
1.0
1.5
2.0
2.5
3.0
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
0
0.5
1.0
1.2
2.0
2.3
3.0
6
8
10
12
14
16
0
50
100
150
200
250
300
350
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
0
4
8
12
16
20 24
28
32
0
20
40
60
80
100
0
1
2
3
4
5
250μs PULSE
TEST<0.5 % DUTY
CYCLE
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 13A
I
C = 26A
I
C = 52A
I
C = 26A
I
C = 52A
13V
5V
15V
I
C = 26A
T
J = 25°C
V
CE = 480V
V
CE = 300V
V
CE = 120V
T
J= 25°C
T
J= -55°C
V
GE = 15V
T
J= 55°C
T
J= 150°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
I C
,COLLECT
OR
CURRENT
(A)
T
J= 25°C
T
J= 125°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
I C
,COLLECT
OR
CURRENT
(A)
T
J= 125°C
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
I C
,COLLECT
OR
CURRENT
(A)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
GATE CHARGE (nC)
FIGURE 4, Gate charge
V
GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(V)
T
J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
T
C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
I C
,DC
COLLECT
OR
CURRENT
(A)
-50 -25
0
25
50 75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
T
J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
V
GS(TH)
,
THRESHOLD
VOL
TAGE
(NORMALIZED)
6V
7V
8V
I
C = 13A
9V
10V
相关PDF资料 |
PDF描述 |
|---|---|
| APT4540BN-BUTT | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4550BN-BUTT | 14 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
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