参数资料
型号: APT44GA60BD30C
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 78 A, 600 V, N-CHANNEL IGBT, TO-247
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 5/9页
文件大小: 221K
代理商: APT44GA60BD30C
052-6308
Rev
A
1
-
2010
Typical Performance Curves
APT44GA60B_SD30C
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5
10-4
10-3
10-2
0.1
1
10
100
1000
10000
0
100
200
300
400
500
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC +TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C,
CAP
ACIT
ANCE
(pF)
0.1
1
10
100
1000
1
10
100
800
V
CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
相关PDF资料
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APT4540BN-BUTT 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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