- 您现在的位置：买卖IC网 > PDF目录36713 > APT44GA60BD30C (MICROSEMI POWER PRODUCTS GROUP) 78 A, 600 V, N-CHANNEL IGBT, TO-247 PDF资料下载
参数资料
| 型号： | APT44GA60BD30C |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 9/9页 |
| 文件大小： | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1
-
2010
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT44GA60B_SD30C
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
4
3
1
2
5
Zero
1
2
3
4
di
F/dt - Rate of Diode Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F/dt Adjust
30
μH
D.U.T.
+18V
0V
V r
trr/Qrr
Waveform
e3 100% Sn Plated
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
Collector (Cathode)
Emitter (Anode)
Collector
(Cathode)
Collector (Cathode)
Emitter (Anode)
Collector
(Cathode)
相关PDF资料 |
PDF描述 |
|---|---|
| APT4540BN-BUTT | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4550BN-BUTT | 14 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
发布紧急采购，3分钟左右您将得到回复。