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参数资料
| 型号： | APT44GA60BD30C |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 6/9页 |
| 文件大小： | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1-
2010
Figure 21, Turn-on Switching Waveforms and Denitions
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
Figure 22, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
IC
A
D.U.T.
VCE
VCC
APT30DQ60
Figure 20, Inductive Switching Test Circuit
APT44GA60B_SD30C
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| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4550BN-BUTT | 14 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
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