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参数资料
| 型号： | APT44GA60BD30C |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1-
2010
0
500
1000
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25
50
75
100
125
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V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.7Ω
L = 100μH
V
CE = 400V
V
GE = +15V
R
G = 4.7Ω
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 4.7Ω
L = 100μH
V
GE = 15V
V
CE = 400V
V
GE = +15V
R
G = 4.7Ω
V
CE = 400V
V
GE = +15V
R
G = 4.7Ω
R
G = 4.7Ω, L = 100
μ
H, V
CE = 400V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 4.7Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,52A
E
off,26A
E
on2,26A
E
off,13A
E
on2,13A
V
CE = 400V
V
GE = +15V
T
J = 125°C
E
on2,52A
E
off,26A
E
on2,52A
E
off,26A
E
on2,13A
E
off,13A
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
t d(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
t r,
RISE
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
t r,
F
ALL
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
E
on2
,
TURN
ON
ENERGY
LOSS
(
μ
J)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
E
OFF
,
TURN
OFF
ENERGY
LOSS
(
μ
J)
R
G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING
ENERGY
LOSSES
(
μ
J)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
on2,52A
Typical Performance Curves
APT44GA60B_SD30C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
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