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参数资料
| 型号： | APTC60DAM18CT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 318K |
| 代理商： | APTC60DAM18CT |
APTC60DAM18CT
A
PT
C
60D
A
M
18C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1000A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 71.5A
18
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 4mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28
Coss
Output Capacitance
10.2
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.85
nF
Qg
Total gate Charge
1036
Qgs
Gate – Source Charge
116
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 143A
444
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 143A
RG = 1.2
W
84
ns
Eon
Turn-on Switching Energy
1608
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2
3920
J
Eon
Turn-on Switching Energy
2630
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2
4824
J
u In accordance with JEDEC standard JESD24-1.
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 125°C
100
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 100A
Tj = 175°C
2.0
2.4
V
QC
Total Capacitive Charge
IF = 100A, VR = 300V
di/dt =2400A/s
140
nC
f = 1MHz, VR = 200V
650
Q
Total Capacitance
f = 1MHz, VR = 400V
500
pF
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