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参数资料
| 型号： | APTC60DAM18CT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/7页 |
| 文件大小： | 318K |
| 代理商： | APTC60DAM18CT |
APTC60DAM18CT
A
PT
C
60D
A
M
18C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Re
ve
rs
e
Dra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
40
80
120 160 200 240
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=400V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
40
80
120
160
200
240
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=400V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
240
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=400V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
0
5
10
15
20
02.5
57.5
10
12.5
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=143A
TJ=125°C
L=100H
0
20
40
60
80
100
120
140
30
50
70
90
110
130
ID, Drain Current (A)
F
req
ue
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=1.2
TJ=125°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
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